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HGTP5N120BND, HGTP5N120CN, HGTP5N120CND

Table of contents:
Info of HGTP5N120BND
Info of HGTP5N120CN
Info of HGTP5N120CND

HGTP5N120BND, HGTP5N120CN, HGTP5N120CND Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:05+

HGTP5N120BND, HGTP5N120CN, HGTP5N120CND Datasheet download

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Part Number: HGTP5N120BND

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: 05+

Description: IGBT NPT N-CH 1200V 21A TO-220AB

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HGTP5N120BND Parameters

Technical/Catalog Information	HGTP5N120BND
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	21A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 5A
Power - Max	167W
Mounting Type	Through Hole
Package / Case	TO-220AB
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGTP5N120BND HGTP5N120BND

HGTP5N120BND General Description

The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49308.

The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49306.

HGTP5N120BND Maximum Ratings

SYMBOL	PARAMETERS	RATING	UNITS
B _VCES I _C25I _C110I_CM V_GES V _GEMS _SOA P _D T _STG TL Tpkg t _SCt_SC	Collector to Emitter Voltage Collector Current Continuous At TC = 25^oC At TC = 110^oC Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150^oC (Figure Power Dissipation Total at TC = 25^oC Power Dissipation Derating TC > 25^oC Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s Package Body for 10s, see Tech Brief 334 Short Circuit Withstand Time (Note 2) at V_GE = 15V. Short Circuit Withstand Time (Note 2) at V_GE = 12V.	1200 21 10 40 ±20 ±30 30A at 1200V 167 1.33 -55 to 150 300 260 8 15	V A A A V V W W/^oC ^o C ^o C ^o C µs µs

HGTP5N120BND Features

• 21A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"

HGTP5N120CN General Description

The HGTP5N120CN and HGT1S5N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49309.

HGTP5N120CN Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES 1200 V
Collector Current Continuous At T_C= 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 25 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C11012 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 40 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J= 150oC, Figure 2 . . . . . . . . . . . . . SSOA 30A at 1200V
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 167 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/
Forward Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. E_AV 36 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . T_J, T_STG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 300
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg 260
Short Circuit Withstand Time (Note 2) at V_GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . .t_SC 8 µs
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . .t_SC15 µs

HGTP5N120CN Features

• 25A, 1200V, T_C= 25
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at T_J = 150
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"

HGTP5N120CN Connection Diagram

HGTP5N120CND General Description

The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is developmental type TA49309. The diode used in anti-parallel is developmental type TA49058.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49307.

HGTP5N120CND Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES 1200 V
Collector Current Continuous At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 25 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 12 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 40 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GES±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GEM ±30 V
Switching Safe Operating Area at T_J = 150, Figure 2 . . . . . . . . . . . . . . SSOA 30A at 1200V
Power Dissipation Total at T_C = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 167 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . T_J, T_STG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L300
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg 260
Short Circuit Withstand Time (Note 2) at V_GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . t_SC 8 µs
Short Circuit Withstand Time (Note 2) at V_GE = 12V. . . . . . . . . . . . . . . . . . . . . . . . ..t_SC 15 µs

HGTP5N120CND Features

• 25A, 1200V, T_C = 25
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at T_J= 150
• Short Circuit Rating
• Low Conduction Loss
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"

HGTP5N120CND Connection Diagram

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