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HMC232C8, HMC232G7, HMC232G8

Table of contents:
Info of HMC232C8
Info of HMC232G7
Info of HMC232G8

HMC232C8, HMC232G7, HMC232G8 Selling Leads, Datasheet

MFG:HITTITE Package Cooled:N/A D/C:2010+

HMC232C8, HMC232G7, HMC232G8 Datasheet download

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Part Number: HMC232C8

MFG: HITTITE

Package Cooled: N/A

D/C: 2010+

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HMC232C8 General Description

The HMC232C8 is a broadband high isolation non-refl ective GaAs MESFET SPDT switch in a non-hermetic surface mount ceramic package. Covering DC to 8.0 GHz, the switch features >55 dB isolation up to 2 GHz and >42 dB isolation up to 8.0 GHz. The switch operates using complementary negative control voltage logic lines of -5/0V and requires no bias supply. This product is a form, fi t & functional replacement for the HMC132C8.

HMC232C8 Maximum Ratings

RF Input Power (Vctl= -5V) (0.5 - 8 GHz)		+30 dBm (@ +50 °C)
Control Voltage Range (A & B)		+1.0V to -7.5 Vdc
Channel Temperature		150°C
Thermal Resistance		94 °C/W
Storage Temperature		-65 to +150 °C
Operating Temperature		-40 to +85 °C

HMC232C8 Features

Isolation: 55 dB @ 2.0 GHz
43 dB @ 6.0 GHz
Insertion Loss: 1.6 dB Typical @ 6.0 GHz
Non-Refl ective Design
Surface Mount Ceramic Package
Direct Replacement for HMC132C8

HMC232C8 Typical Application

The HMC232C8 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military Radios, Radar & ECM
• Test Instrumentation

HMC232C8 Connection Diagram

HMC232G7 General Description

The HMC232G7 is a broadband high isolation non-refl ective GaAs MESFET SPDT switch in a hermetic surface mount package. Covering DC to 6.0 GHz, the switch features >55 dB isolation up to 2 GHz and >42 dB isolation up to 6.0 GHz. The switch operates using complementary negative control voltage logic lines of -5/0V and requires no bias supply. This product is a form, fi t & functional replacement for the HMC132G7.

HMC232G7 Maximum Ratings

RF Input Power (Vctl= -5V) (0.5 - 6 GHz)		+30 dBm (@ +50 °C)
Control Voltage Range (A & B)		+1.0V to -7.5 Vdc
Channel Temperature		150°C
Thermal Resistance (RTH) (junction to lead)		94 °C/W
Storage Temperature		-65 to +150 °C
Operating Temperature		-40 to +85 °C

HMC232G7 Features

Isolation: 55 dB @ 2.0 GHz
42 dB @ 6.0 GHz
Insertion Loss: 1.9 dB Typical @ 6.0 GHz
Non-Refl ective Design
Hermetic Surface Mount Package
Direct Replacement for HMC132G7

HMC232G7 Typical Application

The HMC232G7 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military Radios, Radar & ECM
• Space Systems
• Test Instrumentation

HMC232G8 General Description

The HMC232G8 is a broadband high isolation non-refl ective GaAs MESFET SPDT switch in a hermetic surface mount package. Covering DC to 6.0 GHz, the switch features >48 dB isolation up to 2 GHz and >34 dB isolation up to 6.0 GHz. The switch operates using complementary negative control voltage logic lines of -5/0V and requires no bias supply.

HMC232G8 Maximum Ratings

RF Input Power (Vctl= -5V) (0.5 - 6 GHz)	+30 dBm (@ +50 °C)
Control Voltage Range (A & B)	+1.0V to -7.5 Vdc
Channel Temperature	150
Thermal Resistance (RTH) (junction to lead)	94 °C/W
Storage Temperature	-65 to +150
Operating Temperature	-55 to +85

HMC232G8 Features

Isolation: 48 dB @ 2.0 GHz
34 dB @ 6.0 GHz
Insertion Loss: 1.5 dB Typical @ 4.0 GHz
Non-Refl ective Design
Hermetic Surface Mount Package

HMC232G8 Typical Application

The HMC232G8 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military Radios, Radar & ECM
• Space Systems
• Test Instrumentation

HMC232G8 Connection Diagram

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