HMC352MS8, HMC354MS8, HMC356LP3 Selling Leads, Datasheet
MFG:HITTITE Package Cooled:12505+ D/C:120
HMC352MS8, HMC354MS8, HMC356LP3 Datasheet download

Part Number: HMC352MS8
MFG: HITTITE
Package Cooled: 12505+
D/C: 120
MFG:HITTITE Package Cooled:12505+ D/C:120
HMC352MS8, HMC354MS8, HMC356LP3 Datasheet download

MFG: HITTITE
Package Cooled: 12505+
D/C: 120
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PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HMC356LP3
File Size: 325694 KB
Manufacturer: HITTITE [Hittite Microwave Corporation]
Download : Click here to Download
The HMC356LP3 high dynamic range GaAs PHEMT MMIC Low Noise Amplifi er is ideal for GSM & CDMA cellular basestation and Mobile Radio front-end receivers operating between 350 and 550 MHz. This LNA has been optimized to provide 1.0 dB noise fi gure, 17 dB gain and +38 dBm output IP3 from a single supply of +5.0V @ 104 mA. Input and output return losses are 15 dB typical, with the LNA requiring only four external components to optimize the RF input match, RF ground and DC bias. The HMC356LP3 shares the same package and pinout with the HMC372LP3 high IP3 LNA. A low cost, leadless 3x3 mm (LP3) SMT QFN package houses the low noise amplifi er.
| Drain Bias Voltage (Vdd) | +8.0 Vdc |
| RF Input Power (RFin)(Vs = +5.0 Vdc) |
+15 dBm |
| Channel Temperature | 150 °C |
| Continuous Pdiss (T= 85 °C) (derate 14 mW/°C above 85 °C) |
0.910 W |
| Thermal Resistance (channel to die bottom) |
71.4 °C/W |
| Storage Temperature | -65 to +150 °C |
| Operating Temperature | -40 to +85 °C |

