HSB1426-Q, HSB1426-R, HSB14T300PF Selling Leads, Datasheet
Package Cooled:TO92 D/C:2010+
HSB1426-Q, HSB1426-R, HSB14T300PF Datasheet download
Part Number: HSB1426-Q
MFG: --
Package Cooled: TO92
D/C: 2010+
Package Cooled:TO92 D/C:2010+
HSB1426-Q, HSB1426-R, HSB14T300PF Datasheet download
MFG: --
Package Cooled: TO92
D/C: 2010+
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PDF/DataSheet Download
Datasheet: HSB0104YP
File Size: 28435 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HSB0104YP
File Size: 28435 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HSB0104YP
File Size: 28435 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
The HSB1426-R belongs to the HSB1426 series. It is a PNP epitaxial planar transistor which is made by the MICROELECTRONICS CORP. It is designed for the use of DC-DC converter and it features low collector to emitter saturation voltage. It is available in the TO-92 package.
The following is the description about its absolute maximum ratings at TA is 25 . (1): storage temperature is from -55 to 150 and the maximum junction temperature is 150 ; (2): total power dissipation is 750 mW when TA is 25 ; (3): collector to base voltage(BVCBO) is -20 V and collector to emitter voltage(BVCEO) is -20 V,emitter to base voltage(VBEBO) is -6 V; (4): IC collector current is -3 A; (5): the minimum VBCBO is -20 V when IC -50 A and IE is 0; (6): the minimum BVCEO is -20 V when IC is -1 mA and IB is 0,and VBEBO is -6 V at IE is -10 A and IC is 0; (7): the maximum ICBO is -100 nA when VCB is -20 V and IEBO is -100 nA at VEB is -5 V and IC is 0; (8): the maximum VCE(sat) is -500 mV at the condition of IC is -2 A and IB is -0.1 A; (9): the typical fT is 240 MHz at IC is -500 mA ,VCE is -2 V and f is 100 MHz.
If you want to know more information about the HSB1426-R ,please download the datasheet at www.seekic.com.