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• Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 operating temperature • dv /dt rated • Pb-free lead plating; RoHS compliant
IPB06N03LB Parameters
Technical/Catalog Information
IPB06N03LB
Vendor
Infineon Technologies
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25° C
50A
Rds On (Max) @ Id, Vgs
6.3 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds
2782pF @ 15V
Power - Max
83W
Packaging
Tape & Reel (TR)
Gate Charge (Qg) @ Vgs
22nC @ 5V
Package / Case
D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature
Logic Level Gate
Drawing Number
*
Lead Free Status
Contains Lead
RoHS Status
RoHS Non-Compliant
Other Names
IPB06N03LB IPB06N03LB
IPB06N03LB Maximum Ratings
Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
I D
T C=25 2)
50
A
T C=100
50
Pulsed drain current
I D,pulse
T C=25 3)
200
Avalanche energy, single pulse
E AS
I D=50 A, R GS=25
164
mJ
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=20 V, di /dt =200 A/s, T j,max=175
6
kV/s
Gate source voltage4)
V GS
±20
V
Power dissipation
P tot
T C=25
83
W
Operating and storage temperature
T j, T stg
-55 ... 175
IEC climatic category; DIN IEC 68-1
55/175/56
1) J-STD20 and JESD22
IPB06N03LB Features
• Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated • Pb-free lead plating; RoHS compliant