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IR03H420, IR041C4189, IR041L

IR03H420, IR041C4189, IR041L Selling Leads, Datasheet

MFG:N/A  Package Cooled:NA/  D/C:09+

IR03H420, IR041C4189, IR041L Picture

IR03H420, IR041C4189, IR041L Datasheet download

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Part Number: IR03H420

 

MFG: N/A

Package Cooled: NA/

D/C: 09+

 

 

 
 
 
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  • IR0012L85

  • Vendor: Sanken Qty: 2100  Adddate: 2024-03-29
  • Inquire Now
  • PB GROUP CO.,LTD   China
    Contact: Ms.lindatang   MSN:linda.pb-ic@hotmail.com
    Tel: 86-0755-83753631
    Fax: 86-0755-61281270
    (4)

About IR03H420

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Datasheet: IR03H420

File Size: 60990 KB

Manufacturer: IRF [International Rectifier]

Download : Click here to Download

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IR041C4189 Suppliers

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  • IR0012L85

  • Vendor: Sanken Qty: 2100  Adddate: 2024-03-29
  • Inquire Now
  • PB GROUP CO.,LTD   China
    Contact: Ms.lindatang   MSN:linda.pb-ic@hotmail.com
    Tel: 86-0755-83753631
    Fax: 86-0755-61281270
    (4)

About IR01H(D)214

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Datasheet: IR01H(D)214

File Size: 58941 KB

Manufacturer:

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IR041L Suppliers

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  • IR0012L85

  • Vendor: Sanken Qty: 2100  Adddate: 2024-03-29
  • Inquire Now
  • PB GROUP CO.,LTD   China
    Contact: Ms.lindatang   MSN:linda.pb-ic@hotmail.com
    Tel: 86-0755-83753631
    Fax: 86-0755-61281270
    (4)

About IR01H(D)214

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Datasheet: IR01H(D)214

File Size: 58941 KB

Manufacturer:

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IR03H420 General Description

The IR03H420 is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The logic inputs are compatible with standard CMOS or LSTTL outputs. The front end features an independent high and low side driver in phase with the logic compatible input signals. The output features two HEXFETs in a half-bridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the halfbridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use. The device can operate up to 500 volts.

IR03H420 Maximum Ratings

Symbol Definition Min. Max. Units
VIN High voltage supply - 0.3 500 V
VB High side floating supply absolute voltage - 0.3 525
VO Half-bridge output voltage - 0.3 VIN+ 0.3
VIH/VIL Logic input voltage (HIN & LIN) - 0.3 Vcc + 0.3
VCC Low side and logic fixed supply voltage - 0.3 25
dV/dt Peak diode recovery dv/dt - 3.5 V/ns
PD Package power dissipation @ TA +25 - 2.00 W
RJA Thermal resistance, junction to ambient - 60 /W
TJ Junction temperature -55 150
TS Storage temperature -55 150
TL Lead temperature (soldering, 10 seconds) - 300

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions.

IR03H420 Features

·Output Power MOSFETs in half-bridge configuration
·500V Rated Breakdown Voltage
·High side gate drive designed for bootstrap operation
·Matched propagation delay for both channels
·Independent high and low side output channels
·Undervoltage lockout
·5V Schmitt-triggered input logic
·Half-Bridge output in phase with HIN
·Cross conduction prevention logic
·Internally set dead time

IR03H420 Connection Diagram

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