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IR01H(D)224-P2

Features: · Output Power MOSFETs in half-bridge configuration· 500V rated breakdown voltage· High side gate drive designed for bootstrap operation· Matched propagation delay for both channels· Undervoltage lockout· 5V Schmitt-triggered input logic· Half-Bridge output in phase with HIN· Heatsink ve...

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SeekIC No. : 004375987 Detail

IR01H(D)224-P2: Features: · Output Power MOSFETs in half-bridge configuration· 500V rated breakdown voltage· High side gate drive designed for bootstrap operation· Matched propagation delay for both channels· Under...

IR01H(D)224-P2 Data Sheet

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Part Number:
IR01H(D)224-P2
Supply Ability:
5000

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  • 1~5000
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Upload time: 2024/4/26

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Product Details

Description



Features:

· Output Power MOSFETs in half-bridge configuration
· 500V rated breakdown voltage
· High side gate drive designed for bootstrap operation
· Matched propagation delay for both channels
· Undervoltage lockout
· 5V Schmitt-triggered input logic
· Half-Bridge output in phase with HIN
· Heatsink version (P2) with improved PD


Specifications

Symbol Definition Min. Max. Units
VIN High Voltage Supply 214/224
420		 -0.3
-0.3		 250
500		 V
VB High Side Floating Supply Absolute Voltage 214/224
420		 -0.3
-0.3		 275
525
VO Half-Bridge Output -0.3 VIN + 0.3
VIH/VIL Logic Input Voltage (HIN & LIN) -0.3 Vcc + 0.3
VCC Low Side and Logic Fixed Supply Voltage -0.3 25
dV/dt Peak Diode Recovery dv/dt - 3.5 V/ns
PD Package Power Dissipation @ TA +25°C
- P2		 - 2
4.0		 W
RTHJA Thermal Resistance, Junction to Ambient
- P2		 - 60
30
°C/W


°C
RTHJC Thermal Resistance, Junction to Case (heatsink) - P2 - 20
TJ Junction Temperature -55 150
TS Storage Temperature -55 150
TL Lead Temperature (Soldering, 10 seconds) - 300



Description

The IR01H(D)224-P2 is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET power MOSFET technology, enable ruggedized single package construction. The logic inputs of the IR01H(D)224-P2 are compatible with standard CMOS or LSTTL outputs. The front end features an independent high and low side driver in phase with the logic compatible input signals. The output features two HEXFETs in a halfbridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the half bridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use.




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