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IR03H420

Features: ·Output Power MOSFETs in half-bridge configuration·500V Rated Breakdown Voltage·High side gate drive designed for bootstrap operation·Matched propagation delay for both channels·Independent high and low side output channels·Undervoltage lockout·5V Schmitt-triggered input logic·Half-Bridg...

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SeekIC No. : 004375990 Detail

IR03H420: Features: ·Output Power MOSFETs in half-bridge configuration·500V Rated Breakdown Voltage·High side gate drive designed for bootstrap operation·Matched propagation delay for both channels·Independen...

IR03H420 Data Sheet

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Part Number:
IR03H420
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Output Power MOSFETs in half-bridge configuration
·500V Rated Breakdown Voltage
·High side gate drive designed for bootstrap operation
·Matched propagation delay for both channels
·Independent high and low side output channels
·Undervoltage lockout
·5V Schmitt-triggered input logic
·Half-Bridge output in phase with HIN
·Cross conduction prevention logic
·Internally set dead time


Pinout

Connection Diagram


Specifications

Symbol Definition Min. Max. Units
VIN High voltage supply - 0.3 500 V
VB High side floating supply absolute voltage - 0.3 525
VO Half-bridge output voltage - 0.3 VIN+ 0.3
VIH/VIL Logic input voltage (HIN & LIN) - 0.3 Vcc + 0.3
VCC Low side and logic fixed supply voltage - 0.3 25
dV/dt Peak diode recovery dv/dt - 3.5 V/ns
PD Package power dissipation @ TA +25 - 2.00 W
RJA Thermal resistance, junction to ambient - 60 /W
TJ Junction temperature -55 150
TS Storage temperature -55 150
TL Lead temperature (soldering, 10 seconds) - 300

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions.


Description

The IR03H420 is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The logic inputs of the IR03H420 are compatible with standard CMOS or LSTTL outputs. The front end features an independent high and low side driver in phase with the logic compatible input signals. The output features two HEXFETs in a half-bridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the halfbridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use. The device can operate up to 500 volts.




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