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The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
IR2102S Maximum Ratings
Symbol
Definition
Min.
Max.
Units
VB
High side floating supply voltage
-0.3
625
V
VS
High side floating supply offset voltage
VB - 25
VB + 0.3
VHO
High side floating output voltage
VS - 0.3
VB + 0.3
VCC
Low side and logic fixed supply voltage
-0.3
25
VLO
Low side output voltage
-0.3
VCC + 0.3
VIN
Logic input voltage (HIN & LIN )
- 0.3
VCC + 0.3
dVS/dt
Allowable offset supply voltage transient
-
50
V/ns
PD
Package power dissipation @ TA +25
(8 Lead PDIP)
-
1.0
W
(8 Lead SOIC)
-
0.625
RthJA
Thermal resistance, junction to ambient
(8 Lead PDIP)
-
125
/W
(8 Lead SOIC)
-
200
TJ
Junction temperature
-
150
TS
Storage temperature
-55
150
TL
Lead temperature (soldering, 10 seconds)
-
300
IR2102S Features
• Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout • 3.3V, 5V, and 15V logic input compatible • Matched propagation delay for both channels • Outputs in phase with inputs (IR2101) or out of phase with inputs (IR2102)
IR2102S Connection Diagram
IR2102SPBF Parameters
Technical/Catalog Information
IR2102SPBF
Vendor
International Rectifier
Category
Integrated Circuits (ICs)
Configuration
High and Low Side, Independent
Voltage - Supply
10 V ~ 20 V
Current - Peak
210mA
Delay Time
160ns
Package / Case
8-SOIC (3.9mm Width)
Packaging
Tube
Number of Outputs
2
Input Type
Inverting
Number of Configurations
1
Operating Temperature
-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)
600V
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IR2102SPBF IR2102SPBF
IR2103 Parameters
Technical/Catalog Information
IR2103
Vendor
International Rectifier
Category
Integrated Circuits (ICs)
Configuration
Half Bridge
Voltage - Supply
10 V ~ 20 V
Current - Peak
210mA
Delay Time
680ns
Package / Case
8-DIP (300 mil)
Packaging
Tube
Number of Outputs
2
Input Type
Inverting and Non-Inverting
Number of Configurations
1
Operating Temperature
-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)
600V
Lead Free Status
Contains Lead
RoHS Status
RoHS Non-Compliant
Other Names
IR2103 IR2103
IR2103 General Description
The IR2103(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
IR2103 Maximum Ratings
Symbol
Definition
Min.
Max.
Units
VB
High side floating absolute voltage
-0.3
625
V
VS
High side floating supply offset voltage
VB - 25
VB + 0.3
VHO
High side floating output voltage
VS - 0.3
VB + 0.3
VCC
Low side and logic fixed supply voltage
-0.3
25
VLO
Low side output voltage
-0.3
VCC + 0.3
VIN
Logic input voltage (HIN & LIN)
-0.3
VCC + 0.3
dVS/dt
Allowable offset supply voltage transient
-
50
V/ns
PD
Package power dissipation @ TA +25
(8 lead PDIP)
-
1.0
W
(8 lead SOIC)
-
0.625
RthJA
Thermal resistance, junction to ambient
(8 lead PDIP)
-
125
/W
(8 lead SOIC)
-
200
TJ
Junction temperature
-
150
TS
Storage temperature
-55
150
TL
Lead temperature (soldering, 10 seconds)
-
300
IR2103 Features
• Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout • 3.3V, 5V and 15V logic compatible • Cross-conduction prevention logic • Matched propagation delay for both channels • Internal set deadtime • High side output in phase with HIN input • Low side output out of phase with LIN input
