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IR20153S

Features: • Floating channel designed for bootstrap operation Fully operational up to 150V Tolerant to negative transient voltage, dV/dt immune • Gate drive supply range from 5V to 20V• Undervoltage lockout• Internal recharge FET for bootstrap refresh• Internal deadti...

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SeekIC No. : 004376045 Detail

IR20153S: Features: • Floating channel designed for bootstrap operation Fully operational up to 150V Tolerant to negative transient voltage, dV/dt immune • Gate drive supply range from 5V to 20V&#...

IR20153S Data Sheet

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Part Number:
IR20153S
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Floating channel designed for bootstrap operation Fully operational up to 150V Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 5V to 20V
• Undervoltage lockout
• Internal recharge FET for bootstrap refresh
• Internal deadtime of 11µs and 0.8µs
• CMOS Schmitt-triggered input logic
• Output out of phase with input
• Reset input
• Split pull-up and pull-down gate drive pins
• Also available LEAD-FREE (PbF)


Pinout

Connection Diagram


Specifications

Symbol Definition Min. Max. Units
VB High side driver output stage voltage -5.0 170 V
VS High side floating supply offset voltage - 8.0 150
VHO Output voltage gate high connection VS - 0.3 VB + 0.3
VCC Low side fixed supply voltage -0.3 25
VIN Input voltage (IN and RESET)   -0.3 VCC +0.3
dV/dt Allowable offset voltage slew rate - 50 V/nsec
TJ Junction temperature -55 150  
TS
 Storage temperature -55 150
TL Lead temperature (soldering, 10 seconds) - 300



Description

The IR20153S is a high voltage, high speed power MOSFET driver . Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS output down to 3.3V. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel of the IR20153S can be used to drive an N-channel power MOSFET in the high or low side configuration which operates up to 150 volts.




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