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IR2010PBF, IR2010S, IR2010STRPBF BID 5-7 DAYS 51000 IR 2008+ -

Table of contents:
Info of IR2010PBF
Info of IR2010S
Info of IR2010STRPBF BID 5-7 DAYS 51000 IR 2008+ -

IR2010PBF, IR2010S, IR2010STRPBF BID 5-7 DAYS 51000 IR 2008+ - Selling Leads, Datasheet

MFG:International Rectifier Category:Integrated Circuits (ICs) Package Cooled:SOIC16 D/C:06+

IR2010PBF, IR2010S, IR2010STRPBF BID 5-7 DAYS 51000 IR 2008+ - Datasheet download

Five Points

Part Number: IR2010PBF

Category: Integrated Circuits (ICs)

MFG: International Rectifier

Package Cooled: SOIC16

D/C: 06+

Description: IC DRIVER HIGH/LOW SIDE 14DIP

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IR2010PBF Parameters

Technical/Catalog Information	IR2010PBF
Vendor	International Rectifier
Category	Integrated Circuits (ICs)
Configuration	High and Low Side, Independent
Voltage - Supply	10 V ~ 20 V
Current - Peak	3A
Delay Time	95ns
Package / Case	16-DIP
Packaging	Tube
Number of Outputs	2
Input Type	Non-Inverting
Number of Configurations	1
Operating Temperature	-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)	200V
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IR2010PBF IR2010PBF

IR2010S General Description

The IR2010 is a high power, high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels, ideal for Audio Class D and DC-DC converter applications. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 200 volts. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

IR2010S Maximum Ratings

Symbol	Parameter		Min.	Max.	Units
V_B	High Side Floating Supply Voltage		-0.3	225	V
V_S	High Side Floating Supply Offset Voltage		VB - 25	VB + 0.3
V_HO	High Side Output Voltage		VS -0.3	VB + 0.3
V_CC	Low Side Fixed Supply Voltage		-0.3	25
V_LO	Low Side Output Voltage		-0.3	VCC + 0.3
V_DD	Logic Supply Voltage		-0.3	VSS + 25
V_SS	Logic Supply Offset Voltage		VCC - 25	VCC + 0.3
V_IN	Logic Input Voltage (HIN, LIN & SD)		VSS -0.3	VDD + 0.3
dVS/dt	Allowable Offset Supply Voltage Transient(Figure2)		-	50	V/ns
P_D	Package Power Dissipation @ T_A + 25	(14 lead DIP)	-	1.6	W
		(16 lead SOIC)		1.25
R_thJA	Thermal Resistance, Junction to Ambient	(14 lead DIP)	-	75	/W
		(16 lead SOIC)		100
T_j	Junction Temperature		-	150
T_S	Storage Temperature		-55	150
T_L	Lead Temperature (Soldering, 10 seconds)		-	300

IR2010S Features

• Floating channel designed for bootstrap operation
   Fully operational to 200V
   Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V logic compatible
   Separate logic supply range from 3.3V to 20V
   Logic and power ground ±5V offset
• CMOS Schmitt-triggered inputs with pull-down
• Shut down input turns off both channels
• Matched propagation delay for both channels
• Outputs in phase with inputs
• Also available LEAD-FREE

IR2010S Typical Application

• Audio Class D amplifiers
• High power DC-DC SMPS converters
• Other high frequency applications

IR2010S Connection Diagram

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