IR207DM12CCB

The IR207DM12CCB has some major ratings and characteristics.When parameier is VRM maximum forward voltage,the rating is 1100,the units is mV,the test conditions is TJ=Amb.,IF=20A.When parameier is VRRM reverse breakdown voltage range,the rating is 800 and 1200,the units is V,the test conditions is TJ=Amb.,IRRM=100A.

The IR207DM12CCB has some mechanical data.The nominal back metal composition,thickness is Cr-Ni-Ag(1 KA - 4 KA - 6 KA).The nominal front metal composition,thickness is 100% Al,(20 m).The chip dimensions is 207 x 207 mils .The wafer diameter is 100mm,with std.< 110 > flat.The wafer thickness is 300m.The maximum width of sawing line is 45m.The reject ink dot size is see drawing.The recommended storage environment is storage in original container, in dessicated nitrogen, with no contamination.The IR207DM..CCB has some standard recovery diodes.The junction size is rectangular 207 x 157 mils.The wafer size is 4".The VRR class is 800 and 1200V.The passivation process is glassivated MOAT.The reference IR packaged part is 20ETS series.

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