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IR2110L4, IR2110L6, IR2110PBF

Table of contents:
Info of IR2110L4
Info of IR2110L6
Info of IR2110PBF

IR2110L4, IR2110L6, IR2110PBF Selling Leads, Datasheet

MFG:International Rectifier Category:Integrated Circuits (ICs) Package Cooled:MO-036AB-14 D/C:07+

IR2110L4, IR2110L6, IR2110PBF Datasheet download

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Part Number: IR2110PBF

Category: Integrated Circuits (ICs)

MFG: International Rectifier

Package Cooled: MO-036AB-14

D/C: 07+

Description: IC DRIVER HIGH/LOW SIDE 14DIP

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IR2110L4 General Description

The IR2110L4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 400 volts.

IR2110L4 Maximum Ratings

Symbol	Parameter	Min.	Max.	Units
V_B	High Side Floating Supply Absolute Voltage	-0.5	VS + 20	V
V_S	High Side Floating Supply Offset Voltage	-	400
V_HO	High Side Output Voltage	VS -0.5	VB + 0.5
V_CC	Low Side Fixed Supply Voltage	-0.5	20
V_LO	Low Side Output Voltage	-0.5	VCC + 0.5
V_DD	Logic Supply Voltage	-0.5	VSS + 20
V_SS	Logic Supply Offset Voltage	VCC - 20	VCC + 0.5
V_IN	Logic Input Voltage (HIN, LIN & SD)	VSS - 0.5	VDD + 0.5
dVS/dt	Allowable Offset Supply Voltage Transient (Fig. 16)	-	50	V/ns
P_D	Package Power Dissipation @ TA = 25 (Fig. 19)	-	1.6	W
R_thJA	Thermal Resistance, Junction to Ambient	-	75	/W
T_j	Junction Temperature	-55	125
T_S	Storage Temperature	-55	150
T_L	Lead Temperature (Soldering, 10 seconds)	-	300
	Weight	1.5 (typical)		g

IR2110L4 Features

·Floating channel designed for bootstrap operation
Fully operational to +400V
Tolerant to negative transient voltage dV/dt immune
·Gate drive supply range from 10 to 20V
·Undervoltage lockout for both channels
·Separate logic supply range from 5 to 20V Logic and power ground ±5V offset
·CMOS Schmitt-triggered inputs with pull-down
·Cycle by cycle edge-triggered shutdown logic
·Matched propagation delay for both channels
·Outputs in phase with inputs

IR2110L6 General Description

The IR2110L6 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

IR2110L6 Maximum Ratings

Symbol	Parameter	Min.	Max.	Units
V_B	High Side Floating Supply Absolute Voltage	-0.5	VS + 20	V
V_S	High Side Floating Supply Offset Voltage	-	600
V_HO	High Side Output Voltage	VS -0.5	VB + 0.5
V_CC	Low Side Fixed Supply Voltage	-0.5	20
V_LO	Low Side Output Voltage	-0.5	VCC + 0.5
V_DD	Logic Supply Voltage	-0.5	VSS + 20
V_SS	Logic Supply Offset Voltage	VCC - 20	VCC + 0.5
V_IN	Logic Input Voltage (HIN, LIN & SD)	VSS -0.5	VDD + 0.5
dVS/dt	Allowable Offset Supply Voltage Transient(Figure2)	-	50	V/ns
P_D	Package Power Dissipation @ T_A + 25	-	1.6	W
R_thJA	Thermal Resistance, Junction to Ambient	-	75	/W
T_j	Junction Temperature	-55	125
T_S	Storage Temperature	-55	150
T_L	Lead Temperature (Soldering, 10 seconds)	-	300
	Weight	1.5 (typical)		g

IR2110L6 Features

·Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage dV/dt immune
·Gate drive supply range from 10 to 20V
·Undervoltage lockout for both channels
·Separate logic supply range from 5 to 20V Logic and power ground ±5V offset
·CMOS Schmitt-triggered inputs with pull-down
·Cycle by cycle edge-triggered shutdown logic
·Matched propagation delay for both channels
·Outputs in phase with inputs

IR2110PBF Parameters

Technical/Catalog Information	IR2110PBF
Vendor	International Rectifier
Category	Integrated Circuits (ICs)
Configuration	High and Low Side, Independent
Voltage - Supply	10 V ~ 20 V
Current - Peak	2.5A
Delay Time	120ns
Package / Case	14-DIP (300 mil)
Packaging	Tube
Number of Outputs	2
Input Type	Non-Inverting
Number of Configurations	1
Operating Temperature	-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)	500V
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IR2110PBF IR2110PBF

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