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The IR2111(S) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for halfbridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal deadtime is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
IR2111S Maximum Ratings
Symbol
Definition
Min.
Max.
Units
VB
High side floating supply voltage
-0.3
625
V
VS
High side floating supply offset voltage
VB - 25
VB + 0.3
VHO
High side floating output voltage
VS - 0.3
VB + 0.3
VCC
Low side and logic fixed supply voltage
-0.3
25
VLO
Low side output voltage
-0.3
VCC + 0.3
VIN
Logic input voltage
-0.3
VCC + 0.3
dVS/dt
Allowable offset supply voltage transient(Figure 2)
-
50
V/ns
PD
Package power dissipation @ TA +25
(8 Lead DIP)
-
1.0
W
(8 Lead SOIC)
-
0.625
RthJA
Thermal resistance, junction to ambient
(8 Lead DIP)
-
125
/W
(8 Lead SOIC)
-
200
TJ
Junction temperature
-
150
TS
Storage temperature
-55
150
TL
Lead temperature (soldering, 10 seconds)
-
300
IR2111S Features
• Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels • CMOS Schmitt-triggered inputs with pull-down • Matched propagation delay for both channels • Internally set deadtime • High side output in phase with input • Also available LEAD-FREE
