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The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.
IR2113S Maximum Ratings
Symbol
Definition
Min.
Max.
Units
VB
High side floating supply voltage
(IR2110)
-0.3
525
V
(IR2113)
-0.3
625
VS
High side floating supply offset voltage
VB - 25
VB + 0.3
VHO
High side floating output voltage
VS - 0.3
VB + 0.3
VCC
Low side fixed supply voltage
-0.3
25
VLO
Low side output voltage
-0.3
VCC + 0.3
VDD
Logic supply voltage
-0.3
VSS + 25
VSS
Logic supply offset voltage
VCC - 25
VCC + 0.3
VIN
Logic input voltage (HIN, LIN & SD)
VSS - 0.3
VDD + 0.3
dVs/dt
Allowable offset supply voltage transient (figure 2)
-
50
V/ns
PD
Package power dissipation @ TA +25
(14 lead DIP)
-
1.6
W
(16 lead SOIC)
-
1.25
RTHJA
Thermal resistance, junction to ambient
(14 lead DIP)
-
75
/W
(16 lead SOIC)
-
100
TJ
Junction temperature
-
150
TS
Storage temperature
150
TL
Lead temperature (soldering, 10 seconds)
-
300
IR2113S Features
• Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels • 3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset • CMOS Schmitt-triggered inputs with pull-down • Cycle by cycle edge-triggered shutdown logic • Matched propagation delay for both channels • Outputs in phase with inputs
