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The IR2117 is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 600 volts.
IR2117 Maximum Ratings
Parameter
Value
Units
Symbol
Definition
Min.
Max.
VB
High Side Floating Supply Voltage
-0.3
625
V
VS
High Side Floating Supply Offset Voltage
VB - 25
VB + 0.3
VHO
High Side Floating Output Voltage
VS - 0.3
VB + 0.3
VCC
Logic Supply Voltage
-0.3
25
VIN
Logic Input Voltage
-0.3
VCC + 0.3
dVs/dt
Allowable Offset Supply Voltage Transient (Figure 2)
-
50
V/ns
PD
Package Power Dissipation @ TA +25
(8 Lead DIP)
-
1.0
V/ns
(8 Lead SOIC)
-
0.625
RJA
Thermal Resistance, Junction to Ambient
(8 Lead DIP)
-
125
/W
(8 Lead SOIC)
-
200
TJ
Junction Temperature
-
150
TS
Storage Temperature
-55
150
TL
Lead Temperature (Soldering, 10 seconds)
-
300
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 5 through 8.
IR2117 Features
·Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ·Gate drive supply range from 10 to 20V ·Undervoltage lockout ·CMOS Schmitt-triggered inputs with pull-down ·Output in phase with input