MFG:International Rectifier Category:Integrated Circuits (ICs) Package Cooled:09+ D/C:04+
IR2122, IR2122S, IR2125 Datasheet download
Category: Integrated Circuits (ICs)
MFG: International Rectifier
Package Cooled: 09+
D/C: 04+
Description: IC MOSFET DRIVER LIMITING 8-DIP
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PDF/DataSheet Download
Datasheet: IR2122
File Size: 94018 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IR2122S
File Size: 94018 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IR2125
File Size: 501939 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IR2122 |
| Vendor | International Rectifier |
| Category | Integrated Circuits (ICs) |
| Configuration | High-Side |
| Voltage - Supply | 13 V ~ 20 V |
| Current - Peak | 130mA |
| Delay Time | 250ns |
| Package / Case | 8-DIP (300 mil) |
| Packaging | Tube |
| Number of Outputs | 1 |
| Input Type | Inverting |
| Number of Configurations | 1 |
| Operating Temperature | -40°C ~ 125°C |
| High Side Voltage - Max (Bootstrap) | 600V |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IR2122 IR2122 |
The IR2122(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs, down to 3.3V. The protection circuity detects over-current in the driven power transistor and terminates the gate drive voltage. An open drain FAULT signal is provided to indicate that an over-current shutdown has occurred. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side or low side configuration which operates up to 600 volts.
| Symbol | Definition | Min. | Max. | Units | |
| VB | High Side Floating Supply Voltage | -0.3 | 625 | V | |
| VS | High Side Floating Offset Voltage | VB - 25 | VB + 0.3 | ||
| VHO | High Side Floating Output Voltage | VS - 0.3 | VB + 0.3 | ||
| VCC | Logic Supply Voltage | -0.3 | 25 | ||
| VIN | Logic Input Voltage | -0.3 | VCC + 0.3 | ||
| VFLT | FAULT Output Voltage | -0.3 | VCC + 0.3 | ||
| VCS | Current Sense Voltage | VS - 0.3 | VB + 0.3 | ||
| dVs/dt | Allowable Offset Supply Voltage Transient | - | 50 | V/ns | |
| PD | Package Power Dissipation @ TA +25 | (8 Lead DIP) | - | 1.0 | W |
| (8 Lead SOIC) | - | 0.625 | |||
| RTHJA | Thermal Resistance, Junction to Ambient | (8 Lead DIP) | - | 125 | /W |
| (8 Lead SOIC) | - | 200 | |||
| TJ | Junction Temperature | - | 150 | ||
| TS | Storage Temperature | -55 | 150 | ||
| TL | Lead Temperature (Soldering, 10 seconds) | - | 300 | ||
The IR2122(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs, down to 3.3V. The protection circuity detects over-current in the driven power transistor and terminates the gate drive voltage. An open drain FAULT signal is provided to indicate that an over-current shutdown has occurred. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side or low side configuration which operates up to 600 volts.
| Symbol | Definition | Min. | Max. | Units | |
| VB | High Side Floating Supply Voltage | -0.3 | 625 | V | |
| VS | High Side Floating Offset Voltage | VB - 25 | VB + 0.3 | ||
| VHO | High Side Floating Output Voltage | VS - 0.3 | VB + 0.3 | ||
| VCC | Logic Supply Voltage | -0.3 | 25 | ||
| VIN | Logic Input Voltage | -0.3 | VCC + 0.3 | ||
| VFLT | FAULT Output Voltage | -0.3 | VCC + 0.3 | ||
| VCS | Current Sense Voltage | VS - 0.3 | VB + 0.3 | ||
| dVs/dt | Allowable Offset Supply Voltage Transient | - | 50 | V/ns | |
| PD | Package Power Dissipation @ TA +25 | (8 Lead DIP) | - | 1.0 | W |
| (8 Lead SOIC) | - | 0.625 | |||
| RTHJA | Thermal Resistance, Junction to Ambient | (8 Lead DIP) | - | 125 | /W |
| (8 Lead SOIC) | - | 200 | |||
| TJ | Junction Temperature | - | 150 | ||
| TS | Storage Temperature | -55 | 150 | ||
| TL | Lead Temperature (Soldering, 10 seconds) | - | 300 | ||
| Technical/Catalog Information | IR2125 |
| Vendor | International Rectifier |
| Category | Integrated Circuits (ICs) |
| Configuration | High-Side |
| Voltage - Supply | 12 V ~ 18 V |
| Current - Peak | 1.6A |
| Delay Time | 170ns |
| Package / Case | 8-DIP (300 mil) |
| Packaging | Tube |
| Number of Outputs | 1 |
| Input Type | Non-Inverting |
| Number of Configurations | 1 |
| Operating Temperature | -40°C ~ 125°C |
| High Side Voltage - Max (Bootstrap) | 500V |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IR2125 IR2125 |
The IR2125 is a high voltage, high speed power MOSFET and IGBT driver with over-current limiting protection circuitry. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The protection circuitry detects over-current in the driven power transistor and limits the gate drive voltage. Cycle by cycle shutdown is programmed by an external capacitor which directly controls the time interval between detection of the over-current limiting conditions and latched shut-down. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 500 volts.
| Parameter | Value | |||
| Symbol | Definition | Min. | Max. | Units |
| VB | High Side Floating Supply Voltage | -0.3 | 525 | V |
| VS | High Side Floating Offset Voltage | VB - 25 | VB + 0.3 | |
| VHO | High Side Floating Output Voltage | VS - 0.3 | VB + 0.3 | |
| VCC | Logic Supply Voltage | -0.3 | 25 | |
| VIN | Logic Input Voltage | -0.3 | VCC + 0.3 | |
| VERR | Error Signal Voltage | -0.3 | VCC + 0.3 | |
| VCS | Current Sense Voltage | VS - 0.3 | VB + 0.3 | |
| dVs/dt | Allowable Offset Supply Voltage Transient | - | 50 | V/ns |
| PD | Package Power Dissipation @ TA +25 | - | 1.0 | W |
| RJA | Thermal Resistance, Junction to Ambient | - | 125 | /W |
| TJ | Junction Temperature | - | 150 | |
| TS | Storage Temperature | -55 | 150 | |
| TL | Lead Temperature (Soldering, 10 seconds) | - | 300 | |
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