MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:800 D/C:04+
IRF740STRLPBF, IRF741, IRF7410 Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: 800
D/C: 04+
Description: MOSFET P-CH 12V 16A 8-SOIC
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PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF741
File Size: 158141 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF7410
File Size: 104951 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRF7410 |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25° C | 16A |
| Rds On (Max) @ Id, Vgs | 7 mOhm @ 16A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 8676pF @ 10V |
| Power - Max | 2.5W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 91nC @ 4.5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF7410 IRF7410 |
These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.
| Parameter | Max. | Units | |
| VDS | Drain- Source Voltage | -20 | V |
| ID @ TC = 25 | Continuous Drain Current, VGS @ -4.5V | -16 | A |
| ID @ TC = 70 | Continuous Drain Current, VGS @ -4.5V | -13 | |
| IDM | Pulsed Drain Current | -65 | |
| PD @TC = 25 | Power Dissipation | 2.5 | W |
| PD @TC = 70 | Power Dissipation | 1.6 | |
| Linear Derating Factor | 20 | W/ | |
| VGS | Gate-to-Source Voltage | ±8 | V |
| TJ, TSTG | Junction and Storage Temperature Range | -55 to + 150 |
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