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IRFP048R, IRFP054, IRFP054N

Table of contents:
Info of IRFP048R
Info of IRFP054
Info of IRFP054N

IRFP048R, IRFP054, IRFP054N Selling Leads, Datasheet

MFG:Vishay Package Cooled:TO-247 D/C:2010+

IRFP048R, IRFP054, IRFP054N Datasheet download

Five Points

Part Number: IRFP048R

MFG: Vishay

Package Cooled: TO-247

D/C: 2010+

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IRFP054N General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

IRFP054N Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C = 25°C	Continuous Drain Current, V_GS @ 10V	81	A
I_D @ T_C = 100°C	Continuous Drain Current, V_GS @ 10V	57
I_DM	Pulsed Drain Current	290
P_D @T_C= 25°C	Power Dissipation	170	W
	Linear Derating Factor	1.1	W/
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulse Avalanche Energy	360	mJ
I_AR	Avalanche Current	43	A
E_AR	Repetitive Avalanche Energy	17	mJ
d_v/dt	Peak Diode Recovery dv/dt	5.0	V/ns
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

IRFP054N Features

Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

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