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IRFS11N50A, IRFS11N50APBF, IRFS11N50ATRL

Table of contents:
Info of IRFS11N50A
Info of IRFS11N50APBF
Info of IRFS11N50ATRL

IRFS11N50A, IRFS11N50APBF, IRFS11N50ATRL Selling Leads, Datasheet

MFG:IR Package Cooled:. D/C:06+

IRFS11N50A, IRFS11N50APBF, IRFS11N50ATRL Picture

IRFS11N50A, IRFS11N50APBF, IRFS11N50ATRL Datasheet download

Five Points

Part Number: IRFS11N50A

MFG: IR

Package Cooled: .

D/C: 06+

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IRFS11N50A Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C = 25°C	Continuous Drain Current, V_GS @ 10V	11	A
I_D @ T_C = 100°C	Continuous Drain Current, V_GS @ 10V	7.0
I_DM	Pulsed Drain Current	44
P_D @T_C = 25°C	Power Dissipation	170	W
	Linear Derating Factor	1.3	W/°C
V_GS	Gate-to-Source Voltage	± 30	V
dv/dt	Peak Diode Recovery dv/dt	6.9	V/ns
T_JT_STG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)	°C

IRFS11N50A Typical Application

· Switch Mode Power Supply ( SMPS )
· Uninterruptable Power Supply
· High speed power switching

IRFS11N50APBF General Description

      The IRFS11N50APbF is designed as power MOSFET with typical applications of switch mode power supply, uninterruptable power supply, high speed power switching and it would be lead free.
      It has four features.The first one is that it would have low gate charge Qg results in simple drive requirement.The second one is that it would have improved gate, avalanche and dynamic dv/dt ruggedness.The third one is that it would have fully characterized capacitance and avalanche voltage and current.The fourth one is that it would be effective cross specidied.That are all the features.
      Some absolute maximum ratings have been concluded into several points as follow.The first one is about its continuous drain current, Vgs @ 10V, Tc=25°C which would be 11A.The second one is about its continuous drain current, Vgs @ 10V, Tc=100°C which would be 7.0A.The third one is about its pulse drain current which would be 44A.The fourth one is about its power dissipation which would be 170W.The fifth one is about its linear derating factor which would be 1.3W/°C.The sixth one is about its gate-to source voltage which would be +/-30V.The seventh one is about its peak diode recovery dv/dt which would be 6.9 V/ns.The next one is about its operating junction and storage temperature range which would be from -55 to +150°C.The next one is about its soldering temperature, for 10 sec which would be 300°C.
      And also there are some static electrical characteristics @ Tj=25°C (unless otherwise specified) about it.The first one is about its drain to source breakdown voltage which would be min 500V with condition of Vgs=0V, Id=250uA.The second one is about its breakdown voltage temp. coefficient which would be typ 0.060V/°C.The third one is about its static drain to source on resistance which would be max 0.52 with condition of Vgs=10V, Id=6.6A.The fourth one is about its gate threshold voltage which would be min 2.0V and max 4.0V with condition of Vds=Vgs, Id=250uA.And so on.For more information please contact us.

IRFS11N50APBF Maximum Ratings

IRFS11N50APBF Features

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