MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-262 D/C:`06+(pb-free)
IRFZ44ZL, IRFZ44ZPBF, IRFZ44ZS Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: TO-262
D/C: `06+(pb-free)
Description: MOSFET N-CH 55V 51A TO-220AB
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Datasheet: IRFZ44ZL
File Size: 341196 KB
Manufacturer: IRF [International Rectifier]
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PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRFZ44ZS
File Size: 341196 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V(Silicon Limited) | 51 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V(See Fig. 9) | 36 | |
| IDM | Pulsed Drain Current | 200 | |
| PD @TC = 25°C | Maximum Power Dissipation | 80 | W |
| Linear Derating Factor | 0.53 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy (Thermally Limited) | 86 | mJ |
| EAS (tested) | Single Pulse Avalanche Energy Tested Value | 105 | |
| IAR | Avalance Current | See Fig.12a,12b,15,16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ Tstg |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
| Technical/Catalog Information | IRFZ44ZPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 51A |
| Rds On (Max) @ Id, Vgs | 13.9 mOhm @ 31A, 10V |
| Input Capacitance (Ciss) @ Vds | 1420pF @ 25V |
| Power - Max | 80W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 43nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFZ44ZPBF IRFZ44ZPBF |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter | Max. | Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 51 | A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V (See Fig. 9) | 36 | |
| IDM | Pulsed Drain Current | 200 | |
| PD @TC = 25 | Maximum Power Dissipation | 80 | W |
| Linear Derating Factor | 0.53 | W/ | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| EAS | Single Pulse Avalanche Energy (Thermally Limited) | 86 | mJ |
| EAS (tested) | Single Pulse Avalanche Energy Tested Value | 105 | |
| IAR | Avalanche Current | See Fig.12a,12b,15,16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ ,TSTG | Operating Junction and Storage Temperature Range | -55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 screw | 10 lbf•in (1.1N•m) |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V(Silicon Limited) | 51 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V(See Fig. 9) | 36 | |
| IDM | Pulsed Drain Current | 200 | |
| PD @TC = 25°C | Maximum Power Dissipation | 80 | W |
| Linear Derating Factor | 0.53 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy (Thermally Limited) | 86 | mJ |
| EAS (tested) | Single Pulse Avalanche Energy Tested Value | 105 | |
| IAR | Avalance Current | See Fig.12a,12b,15,16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ Tstg |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
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