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IRG4PC40WPBF, IRG4PC50D, IRG4PC50F

Table of contents:
Info of IRG4PC40WPBF
Info of IRG4PC50D
Info of IRG4PC50F

IRG4PC40WPBF, IRG4PC50D, IRG4PC50F Selling Leads, Datasheet

MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:IR D/C:06+

IRG4PC40WPBF, IRG4PC50D, IRG4PC50F Datasheet download

Five Points

Part Number: IRG4PC40WPBF

Category: Discrete Semiconductor Products

MFG: International Rectifier

Package Cooled: IR

D/C: 06+

Description: IGBT FAST 600V 70A TO-247AC

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IRG4PC40WPBF Parameters

Technical/Catalog Information	IRG4PC40WPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	40A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 20A
Power - Max	15W
Mounting Type	Through Hole
Package / Case	TO-247-3 (TO-247AC, Straight Leads)
Packaging	Bag
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4PC40WPBF IRG4PC40WPBF

IRG4PC40WPBF Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Breakdown Voltage	600	V
I_C @ T_C = 25	Continuous Collector Current	40	A
I_C @ T_C =100	Continuous Collector Current	20
I_CM	Pulsed Collector Current	160
I_LM	Clamped Inductive Load Current	160
V_GE	Gate-to-Emitter Voltage	± 20	V
E_ARV	Reverse Voltage Avalanche Energy	160	mJ
P_D @ T_C =25	Maximum Power Dissipation	160	W
P_D @ T_C =100	Maximum Power Dissipation	65	W
T_J,T_STG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	300 (0.063 in. (1.6mm from case )
	Mounting torque, 6-32 or M3 screw.	10 lbf`in (1.1N`m)

IRG4PC40WPBF Features

• Designed expressly for Switch-Mode Power Supply and PFC
(power factor correction) applications
• Industry-benchmark switching losses improve efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and constructionoffers tighter parameters distribution,
exceptional reliability
• Lead-Free

IRG4PC50F Parameters

Technical/Catalog Information	IRG4PC50F
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	70A
Vce(on) (Max) @ Vge, Ic	1.6V @ 15V, 39A
Power - Max	200W
Mounting Type	Through Hole
Package / Case	TO-247-3 (TO-247AC, Straight Leads)
Packaging	Bag
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRG4PC50F IRG4PC50F

IRG4PC50F Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Breakdown Voltage	600	V
I_C@ T_C = 25	Continuous Collector Current	70	A
I_C @ T_C = 100	Continuous Collector Current	39
I_CM	Pulsed Collector Current	280
I_LM	Clamped Inductive Load Current	280
V_GE	Gate-to-Emitter Voltage	± 20	V
E_ARV	Reverse Voltage Avalanche Energy	20	mJ
P_D @ T_C = 25	Maximum Power Dissipation	200	W
P_D @ T_C = 100	Maximum Power Dissipation	78	W
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	300 (0.063 in. (1.6mm) from case
	Mounting torque, 6-32 or M3 screw.	10 lbf•in (1.1N•m)

IRG4PC50F Features

• Optimized for medium operating frequencies ( 1-5 kHz in hard switching,
>20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and
higher efficiency than Generation 3
• Industry standard TO-247AC package

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