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• UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations • Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247 • Creepage distance increased to 5.35mm
IRG4PSH71UDPBF Parameters
Technical/Catalog Information
IRG4PSH71UDPBF
Vendor
International Rectifier
Category
Discrete Semiconductor Products
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
*
Vce(on) (Max) @ Vge, Ic
*
Power - Max
350W
Mounting Type
Through Hole
Package / Case
Super-247-3 (Straight Leads)
Packaging
Bag
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IRG4PSH71UDPBF IRG4PSH71UDPBF
IRG4PSH71UDPBF Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
1200
V
IC @ TC = 25°C
Continuous Collector Current
99
A
IC @ TC = 100°C
Continuous Collector Current
50
ICM
Pulse Collector Current
200
ILM
Clamped Inductive Load current
200
VGE
Gate-to-Emitter Voltage
±20
V
IF @ Tc = 100°C
Diode Continuous Forward Current
70
W
IFM
Diode Maximum Forward Current
200
PD @ TC = 25°C
Maximum Power Dissipation
350
PD @ TC = 100°C
Maximum Power Dissipation
140
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to +150
°C
Storage Temperature Range, for 10 sec.
300 (0.063 in. (1.6mm) from case)
IRG4PSH71UDPBF Features
• UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations • Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247 • Creepage distance increased to 5.35mm • Lead-Free