MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:N.A
IRGP50B60PD1, IRGP50B60PD1PBF, IRGPC20F Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: TO-247
D/C: N.A
Description: IGBT W/DIODE 600V 75A TO247AC
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PDF/DataSheet Download
Datasheet: IRGP50B60PD1
File Size: 482057 KB
Manufacturer: IRF [International Rectifier]
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Datasheet: IRG4BAC50S
File Size: 138592 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: IRGPC20F
File Size: 108413 KB
Manufacturer:
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| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 600 | V |
| IF@ TC= 25° | CContinuous Collector Current | 75 | A |
| IF@ TC= 100° | CContinuous Collector Current | 45 | A |
| ICM | Pulsed Collector Current | 150 | A |
| ICM | Clamped Inductive Load Current | 150 | A |
| IF@ TC= 25° | 40 | A | |
| IF@ TC= 100° | CDiode Continuous Forward Current | 15 | A |
| LSM | Diode Maximum Forward Current | 60 | A |
| VGE | Gate-to-Emitter Voltage | ± 20 | V |
| PD@ TC= 25° | CMaximum Power Dissipation | 390 | W |
| PD@ TC= 100° | CMaximum Power Dissipation | 156 | W |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
| Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) |
| Technical/Catalog Information | IRGP50B60PD1PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 75A |
| Vce(on) (Max) @ Vge, Ic | 2.85V @ 15V, 50A |
| Power - Max | 390W |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 (TO-247AC, Straight Leads) |
| Packaging | Bag |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRGP50B60PD1PBF IRGP50B60PD1PBF |
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 600 | V |
| IC @ TC = 25 | Continuous Collector Current | 75 | A |
| IC @ TC = 100 | Continuous Collector Current | 45 | A |
| ICM | Pulse Collector Current (Ref. Fig. C.T.4) | 150 | A |
| ILM | Clamped Inductive Load Current | 150 | A |
| IF @TC = 25 | Diode Continous Forward Current | 40 | A |
| IF @TC = 25 | Diode Continous Forward Current | 15 | A |
| IFRM | Maximum Repetitive Forward Current |
60 |
A |
| VGE | Gate-to-Emitter Voltage | ±20 | V |
| PD @ TC = 25°C | Maximum Power Dissipation | 390 | W |
| PD @ TC = 100°C | Maximum Power Dissipation | 156 | W |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 | |
| Soldering Temperature for 10 sec. | 300 (0.063 in. (1.6mm) from case) | ||
| Mounting Torque, 6-32 or M3 Screw | 10 lbf`in (1.1 N`m) |
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Voltage |
600 |
V |
| IC @ TC = 25°C | Continuous Collector Current |
16 |
A |
| IC @ TC = 100°C | Continuous Collector Current |
9.0 | |
| ICM | Pulsed Collector Current |
64 | |
| ILM | Clamped Inductive Load Current |
64 | |
| VGE | Gate-to-Emitter Voltage |
±20 |
V |
| EARV | Reverse Voltage Avalanche Energy |
5.0 |
mJ |
| PD @ TC = 25°C | Maximum Power Dissipation |
60 |
W |
| PD @ TC = 100°C | Maximum Power Dissipation |
24 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C
|
| Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) | ||
| Mounting torque, 6-32 or M3 screw. |
10 lbf`in (1.1N`m) |
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