IRGPH30MD2, IRGPH30S, IRGPH40 Selling Leads, Datasheet
MFG:IR Package Cooled:IOR D/C:TO
IRGPH30MD2, IRGPH30S, IRGPH40 Datasheet download
Part Number: IRGPH30MD2
MFG: IR
Package Cooled: IOR
D/C: TO
IRGPH30MD2, IRGPH30S, IRGPH40
- Table of contents:
Info of IRGPH30MD2
Info of IRGPH30S
Info of IRGPH40
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About IRGPH30MD2
PDF/DataSheet Download
Datasheet: IRGPH30MD2
File Size: 88438 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRGPH30S
PDF/DataSheet Download
Datasheet: IRGPH30S
File Size: 84689 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRGPH40
PDF/DataSheet Download
Datasheet: IRGPH40
File Size: 261154 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRGPH30MD2 General Description
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
IRGPH30MD2 Maximum Ratings
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 1200 | V |
| IC @ TC = 25°C | Continuous Collector Current | 15 | A |
| IC @ TC = 100°C | Continuous Collector Current | 9.0 | A |
| ICM | Pulsed Collector Current | 30 | A |
| ILM | Clamped Inductive Load Current | 30 | A |
| IF @ TC = 100°C | Diode Continuous Forward Current | 6.0 | A |
| IFM | Diode Maximum Forward Current | 30 | A |
| tsc | Short Circuit Withstand Time | 10 | µs |
| VGE | Gate-to-Emitter Voltage | ± 20 | V |
| PD @ TC = 25°C | Maximum Power Dissipation | 100 | W |
| PD @ TC = 100°C | Maximum Power Dissipation | 42 | W |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
| Operating Junction and Storage Temperature Range |
300 (0.063 in. (1.6mm) from case) | °C | |
| Mounting Torque, 6-32 or M3 Screw. | 10 lbf•in (1.1 N•m) |
IRGPH30MD2 Features
• Short circuit rated -10µs @125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency ( 1 to 10kHz)
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency ( 1 to 10kHz)
IRGPH30S General Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
IRGPH30S Maximum Ratings
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 1200 | V |
| IC @ TC = 25°C | Continuous Collector Current | 22 | A |
| IC @ TC = 100°C | Continuous Collector Current | 13 | A |
| ICM | Pulsed Collector Current | 44 | A |
| ILM | Clamped Inductive Load Current | 44 | A |
| VGE | Gate-to-Emitter Voltage | ± 20 | V |
| EARV | Reverse Voltage Avalanche Energy | 10 | mJ |
| PD @ TC = 25°C | Maximum Power Dissipation | 100 | W |
| PD @ TC = 100°C | Maximum Power Dissipation | 13 | W |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
| Operating Junction and Storage Temperature Range |
300 (0.063 in. (1.6mm) from case) | °C | |
| Mounting Torque, 6-32 or M3 Screw. | 10 lbf•in (1.1 N•m) |
IRGPH30S Features
• Switching-loss rating includes all "tail" losses
• Optimized for line frequency operation (to 400Hz)
• Optimized for line frequency operation (to 400Hz)
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