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IXSK50N60AU1, IXSK50N60BU1, IXSK80N60B

IXSK50N60AU1, IXSK50N60BU1, IXSK80N60B Selling Leads, Datasheet

MFG:IXYS  Category:Discrete Semiconductor Products  Package Cooled:TO-  D/C:TO-

IXSK50N60AU1, IXSK50N60BU1, IXSK80N60B Picture

IXSK50N60AU1, IXSK50N60BU1, IXSK80N60B Datasheet download

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Part Number: IXSK50N60AU1

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-

D/C: TO-

Description: IGBT 600V 80A SCSOA TO-264

 

 
 
 
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About IXSK50N60AU1

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Datasheet: IXSK50N60AU1

File Size: 97631 KB

Manufacturer: IXYS [IXYS Corporation]

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About IXSA10N60B2D1

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Datasheet: IXSA10N60B2D1

File Size: 603250 KB

Manufacturer: IXYS [IXYS Corporation]

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About IXSA10N60B2D1

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Datasheet: IXSA10N60B2D1

File Size: 603250 KB

Manufacturer: IXYS [IXYS Corporation]

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IXSK50N60AU1 Maximum Ratings

Symbol Test Conditions Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
600
600
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
ID25
ID90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
75
50
200

A
A
A

SSOA
(RBSOA)
VGE = 15 V, TJ = 125°C, RG = 2.7
Clamped inductive load, VCC= 0.8 VCES
ICM = 100
@ 0.8 VCES
A
tSC
(SCSOA)
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 33 ?, non repetitive
10 s
PC TC = 25°C 300 W
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150
°C
°C
°C
Md Mounting torque 0.9/6 Nm/lb.in.
Weight
10 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300 °C

IXSK50N60AU1 Features

· International standard package JEDEC TO-264 AA
· Guaranteed Short Circuit SOA capability
· High frequency IGBT and antiparallel FRED in one package
· 2nd generation HDMOSTM process
· Low VCE(sat)
    - for minimum on-state conduction losses
· MOS Gate turn-on
    - drive simplicity
· Fast Recovery Epitaxial Diode (FRED)
    - soft recovery with low IRM

IXSK50N60AU1 Typical Application

·AC motor speed control
·DC servo and robot drives
·DC choppers
·Uninterruptible power supplies (UPS)
·Switch-mode and resonant-mode power supplies

IXSK50N60BU1 Parameters

Technical/Catalog InformationIXSK50N60BU1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)75A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 50A
Power - Max300W
Mounting TypeThrough Hole
Package / CaseTO-264AA
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXSK50N60BU1
IXSK50N60BU1

IXSK50N60BU1 Features

• International standard package JEDEC TO-264 AA, and hole-less TO-247 package for clip mounting
• Guaranteed Short Circuit SOA capability
• High frequency IGBT and antiparallel FRED in one package
• Latest generation HDMOSTM process
• Low VCE(sat)
- for minimum on-state conduction losses
• MOS Gate turn-on
- drive simplicity
• Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM

IXSK50N60BU1 Typical Application

• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode power supplies

IXSK80N60B Parameters

Technical/Catalog InformationIXSK80N60B
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)160A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 80A
Power - Max500W
Mounting TypeThrough Hole
Package / CaseTO-264AA
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXSK80N60B
IXSK80N60B

IXSK80N60B Maximum Ratings

Symbol           Test Conditions                                                             Maximum Ratings
VCES        TJ = 25°C to 150°C                                                           600                   V
VCGR        TJ = 25°C to 150°C; RGS = 1 M                                      600                   V
VCES         Continuous                                                                        ±20                   V
VGEM         Transient                                                                           ±30                   V
IC25          TC = 25°C (silicon chip capability)                                     160                   A
IC90          TC = 90°C (silicon chip capability)                                      80                    A
IL(RMS)      TC = 90°C (silicon chip capability)                                      75                   A
ICM            TC = 25°C, 1 ms                                                               300                   A
SSOA          VGE = 15 V, TVJ = 125°C, RG = 5                        ICM = 160                    A
(RBSOA)      Clamped inductive load                                         @ 0.8 VCES
tsc               VGE = 15 V, VCE = 0.6 VCES, TJ = 125°C 10 s
SCSOA         RG = 5 , non-repetitive
P               TC = 25°C                                                                       500                   W
T                                                                                            -55 ... +150                  °C
TJM                                                                                                      150                   °C
Tstg                                                                                        -55 ... +150                   °C
TL                 1.6 mm (0.063 in.) from case for 10 s                             300                   °C
Md                Mounting torque TO-264 0.4/6 Nm/lb.in
Weight          PLUS 247                                                                           6                       g
                     TO-264                                                                              10                      g

IXSK80N60B Features

· International standard packages
·Very high current, fast switching IGBT
· Low VCE(sat)
- for minimum on-state conduction losses
· MOS Gate turn-on
- drive simplicity

IXSK80N60B Typical Application

· AC motor speed control
· DC servo and robot drives
· DC choppers
· Uninterruptible power supplies (UPS)
·Switch-mode and resonant-modepower supplies

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