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IXSH15N120A

Features: • 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses• MOS Gate turn-on - drive simplicitySpecifications Symbol Test Conditions Maximum Ratings VCESVCGR TJ = 25°C to 150°CTJ = 25°C to 150°C; RGE = 1 M 12001200 VV VGESVGEM Con...

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SeekIC No. : 004381642 Detail

IXSH15N120A: Features: • 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses• MOS Gate turn-on - drive simplicitySpecifications Symbol Test Conditions Maximum ...

IXSH15N120A Data Sheet

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Part Number:
IXSH15N120A
Supply Ability:
5000

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Upload time: 2024/4/27

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Product Details

Description



Features:

• 2nd generation HDMOSTM process Low VCE(sat)
   - for minimum on-state conduction losses
• MOS Gate turn-on
   - drive simplicity


Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M		 1200
1200		 V
V
VGES
VGEM		 Continuous
Transient		 ±20
±30		 V
V
IC25
IC90
ICM		 TC = 25°C
TC = 90°C
TC = 25°C, 1 ms		 30
15
60		 A
A
A
SSOA
(RBSOA)		 VGE = 15 V, TJ = 125°C, RG = 82
Clamped inductive load, L = 100 µH		 ICM = 30
@ 0.8 VCES		 A
tsc T = 125ºC, V = 720 V; V = 15V, R = 82 5 µs
PC TC = 25°C 150 w
TJ
TJM
TSTG		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
Md Mounting torque 1.15/10 Nm/lb-in.
Weight   6 g
Max. Lead Temperature for
Soldering (1.6mm from case for 10s)		 300 °C



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