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IXSN80N60BD1, IXSP10N60B2D1, IXSP20N60B2D1

IXSN80N60BD1, IXSP10N60B2D1, IXSP20N60B2D1 Selling Leads, Datasheet

MFG:IXYS  Category:Discrete Semiconductor Products  Package Cooled:TO-220  D/C:08+/09+

IXSP10N60B2D1 Picture

IXSN80N60BD1, IXSP10N60B2D1, IXSP20N60B2D1 Datasheet download

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Part Number: IXSP10N60B2D1

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-220

D/C: 08+/09+

Description: IGBT HS W/DIODE 600V 35A TO220

 

 
 
 
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About IXSA10N60B2D1

PDF/DataSheet Download

Datasheet: IXSA10N60B2D1

File Size: 603250 KB

Manufacturer: IXYS [IXYS Corporation]

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About IXSP10N60B2D1

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Datasheet: IXSP10N60B2D1

File Size: 603250 KB

Manufacturer: IXYS [IXYS Corporation]

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About IXSA10N60B2D1

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Datasheet: IXSA10N60B2D1

File Size: 603250 KB

Manufacturer: IXYS [IXYS Corporation]

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IXSN80N60BD1 Features

·International standard package
·Aluminium-nitride isolation
   - high power dissipation
·Isolation voltage 3000 V~
·UL registered E 153432
·Low VCE(sat)
  - for minimum on-state conduction losses
·Fast Recovery Epitaxial Diode
  - short trr and IRM
·Low collector-to-case capacitance (< 60 pF)
  - reduced RFI
·Low package inductance (< 10 nH)
  - easy to drive and to protect

IXSN80N60BD1 Typical Application

·AC motor speed control
·DC servo and robot drives
·DC choppers
·Uninterruptible power supplies (UPS)
·Switch-mode and resonant-mode power supplies

IXSP10N60B2D1 Parameters

Technical/Catalog InformationIXSP10N60B2D1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)20A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 10A
Power - Max100W
Mounting TypeThrough Hole
Package / CaseTO-220AB
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXSP10N60B2D1
IXSP10N60B2D1

IXSP10N60B2D1 Maximum Ratings

Symbol Test Conditions Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
600
600
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
IC25
IC110
IF(110)
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
20
10
11
30

A
A
A
A

SSOA
(RBSOA)
VGE = 15 V, TJ = 125°C, RG = 2.7
Clamped inductive load, VCC= 0.8 VCES
ICM =20
@ 0.8 VCES
A
tSC
(SCSOA)
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 33 ?, non repetitive
10 s
PC TC = 25°C 100 W
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150
°C
°C
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic Body t = 10s
300
250
°C
°C
Md Mounting torque 1.13/10 Nm/lb.in.
Weight   6 g

IXSP10N60B2D1 Features

• International standard packages
• Guaranteed Short Circuit SOA capability
• Low VCE(sat)
   - for low on-state conduction losses
• High current handling capability
• MOS Gate turn-on
   - drive simplicity
• Fast fall time for switching speeds up to 20 kHz

IXSP10N60B2D1 Typical Application

• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding

IXSP20N60B2D1 Parameters

Technical/Catalog InformationIXSP20N60B2D1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)35A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 16A
Power - Max190W
Mounting TypeThrough Hole
Package / CaseTO-220AB
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXSP20N60B2D1
IXSP20N60B2D1

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