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JDV2S05E, JDV2S05E/FE, JDV2S05S

JDV2S05E, JDV2S05E/FE, JDV2S05S Selling Leads, Datasheet

MFG:TOSHIBA  Package Cooled:SOT-423  D/C:05+

JDV2S05E, JDV2S05E/FE, JDV2S05S Picture

JDV2S05E, JDV2S05E/FE, JDV2S05S Datasheet download

Five Points

Part Number: JDV2S05E

 

MFG: TOSHIBA

Package Cooled: SOT-423

D/C: 05+

 

 

 
 
 
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About JDV2S05E

PDF/DataSheet Download

Datasheet: JDV2S05E

File Size: 69756 KB

Manufacturer: Toshiba

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About JDV2S01E

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Datasheet: JDV2S01E

File Size: 89948 KB

Manufacturer: TOSHIBA [Toshiba Semiconductor]

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About JDV2S01E

PDF/DataSheet Download

Datasheet: JDV2S01E

File Size: 89948 KB

Manufacturer: TOSHIBA [Toshiba Semiconductor]

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JDV2S05E Maximum Ratings

Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
125
Storage temperature range
Tstg
55~125


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Conce and Methods") and individualreliability data (i.e. reliability test report and estimated failure rate, etc).

JDV2S05E Features

`Small Package  
`High Capacitance Ratio : C1V/C4V  = 1.9 (typ.) 
`Low Series Resistance : rs = 0.30 (typ.)

JDV2S05S Maximum Ratings

Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
150
Storage temperature range
Tstg
−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

JDV2S05S Features

• High capacitance ratio: C1V/C4V = 1.9 (typ.)
• Low series resistance: rs = 0.3 (typ.)
• This device is suitable for use in a small-size tuner.

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