JDV2S05E

Features: `Small Package `High Capacitance Ratio : C1V/C4V = 1.9 (typ.)`Low Series Resistance : rs= 0.30 (typ.) Specifications Characteristics Symbol Rating Unit Reverse voltage VR 10 V Junction temperature Tj 125 Storage temperature range Tstg ...

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JDV2S05E Picture
SeekIC No. : 004382168 Detail

JDV2S05E: Features: `Small Package `High Capacitance Ratio : C1V/C4V = 1.9 (typ.)`Low Series Resistance : rs= 0.30 (typ.) Specifications Characteristics Symbol Rating Unit Reverse voltag...

floor Price/Ceiling Price

Part Number:
JDV2S05E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/17

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Product Details

Description



Features:

`Small Package  
`High Capacitance Ratio : C1V/C4V  = 1.9 (typ.) 
`Low Series Resistance : rs = 0.30 (typ.)



Specifications

Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
125
Storage temperature range
Tstg
55~125


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Conce and Methods") and individualreliability data (i.e. reliability test report and estimated failure rate, etc).




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