K4T51043QC-ZLCC, K4T51043QE, K4T51043QE-ZCCC Selling Leads, Datasheet
D/C:09+
K4T51043QC-ZLCC, K4T51043QE, K4T51043QE-ZCCC Datasheet download
Part Number: K4T51043QC-ZLCC
MFG: --
Package Cooled:
D/C: 09+
D/C:09+
K4T51043QC-ZLCC, K4T51043QE, K4T51043QE-ZCCC Datasheet download
MFG: --
Package Cooled:
D/C: 09+
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Datasheet: K4T51043QC-ZLCC
File Size: 645057 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
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PDF/DataSheet Download
Datasheet: K4T1G044QA
File Size: 626689 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: K4T1G044QA
File Size: 626689 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed doubledata- rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications.
The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/ CAS multiplexing style. For example, 512Mb(x4) device receive 14/11/2 addressing.
The 512Mb DDR2 device operates with a single 1.8V ± 0.1V power supply and 1.8V ± 0.1V VDDQ.
The 512Mb DDR2 device is available in 60ball FBGAs(x4/x8) and in 84ball FBGAs(x16).
Symbol | Parameter | Rating | Units | Notes |
VDD | Voltage on VDD pin relative to VSS | - 1.0 V ~ 2.3 V | V | 1 |
VDDQ | Voltage on VDDQ pin relative to VSS | - 0.5 V ~ 2.3 V | V | 1 |
VDDL | Voltage on VDDL pin relative to VSS | - 0.5 V ~ 2.3 V | V | 1 |
VIN, VOUT | Voltage on any pin relative to VSS | - 0.5 V ~ 2.3 V | V | 1 |
TSTG | Storage Temperature | -55 to +100 | °C | 1, 2 |