K4T51163QE

The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed doubledata- rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications.

The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/ CAS multiplexing style. For example, 512Mb(x4) device receive 14/11/2 addressing.

The 512Mb DDR2 device operates with a single 1.8V ± 0.1V power supply and 1.8V ± 0.1V VDDQ.

The 512Mb DDR2 device is available in 60ball FBGAs(x4/x8) and in 84ball FBGAs(x16).