K9F2G08ROM-JIB0, K9F2G08U0A, K9F2G08U0A-IIBO Selling Leads, Datasheet
MFG:SAMSUNG Package Cooled:7 D/C:BGA
K9F2G08ROM-JIB0, K9F2G08U0A, K9F2G08U0A-IIBO Datasheet download
Part Number: K9F2G08ROM-JIB0
MFG: SAMSUNG
Package Cooled: 7
D/C: BGA
MFG:SAMSUNG Package Cooled:7 D/C:BGA
K9F2G08ROM-JIB0, K9F2G08U0A, K9F2G08U0A-IIBO Datasheet download
MFG: SAMSUNG
Package Cooled: 7
D/C: BGA
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PDF/DataSheet Download
Datasheet: K9F1208B0B
File Size: 1054247 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: K9F2G08U0A
File Size: 1025337 KB
Manufacturer: Samsung
Download : Click here to Download
PDF/DataSheet Download
Datasheet: K9F1208B0B
File Size: 1054247 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200s on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns(45ns with 1.8V device) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0As extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.