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Part Number: K9F1208U0A-VCB0
Description: Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device i...
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K9F1208U0A-VCB0
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DataSheet
General Description
K9F1208U0A-VCB0 General Description
Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word.
The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F12XXX0A¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F12XXX0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
K9F1208U0A-VCB0 Maximum Ratings
| Parameter | Symbol | Rating | Unit | ||
| K9F12XXQ0A(1.8V) | K9F12XXU0A(3.3V) | ||||
| Voltage on any pin relative to VSS | VIN/OUT | -0.6 to + 2.45 | -0.6 to + 4.6 | V | |
| VCC | -0.6 to + 2.45 | -0.6 to + 4.6 | |||
| VCCQ | -0.6 to + 2.45 | -0.6 to + 4.6 | |||
| Temperature Under Bias | K9E2G08B0M-XCB0 | TBIAS | -10 to +125 | ||
| K9E2G08B0M-XIB0 | -40 to +125 | ||||
| Storage Temperature | K9E2G08B0M-XCB0 | TSTG | -65 to +150 | ||
| K9E2G08B0M-XIB0 | |||||
| Short Circuit Current | IOS | 5 | mA | ||
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns. Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
K9F1208U0A-VCB0 Features
· Voltage Supply
- 1.8V device(K9F12XXQ0A) : 1.70~1.95V
- 3.3V device(K9F12XXU0A) : 2.7 ~ 3.6 V
· Organization
- Memory Cell Array
- X8 device(K9F1208X0A) : (64M + 2048K)bit x 8 bit
- X16 device(K9F1216X0A) : (32M + 1024K)bit x 16bit
- Data Register
- X8 device(K9F1208X0A) : (512 + 16)bit x 8bit
- X16 device(K9F1216X0A) : (256 + 8)bit x16bit
· Automatic Program and Erase
- Page Program
- X8 device(K9F1208X0A) : (512 + 16)Byte
- X16 device(K9F1216X0A) : (256 + 8)Word
- Block Erase :
- X8 device(K9F1208X0A) : (16K + 512)Byte
- X16 device(K9F1216X0A) : ( 8K + 256)Word
· Page Read Operation
- Page Size
- X8 device(K9F1208X0A) : (512 + 16)Byte
- X16 device(K9F1216X0A) : (256 + 8)Word
- Random Access : 12ms(Max.)
- Serial Page Access : 50ns(Min.)
· Fast Write Cycle Time
- Program time : 200ms(Typ.)
- Block Erase Time : 2ms(Typ.)
· Command/Address/Data Multiplexed I/O Port
· Hardware Data Protection
- Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
· Command Register Operation
· Intelligent Copy-Back
· Unique ID for Copyright Protection
· Package
- K9F12XXU0A-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F12XXX0A-DCB0/DIB0
63- Ball TBGA
- K9F1208U0A-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F12XXU0A-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F12XXX0A-HCB0/HIB0
63- Ball TBGA - Pb-free Package
- K9F1208U0A-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1208U0A-V,F(WSOPI ) is the same device as K9F1208U0A-Y,P(TSOP1) except package type.
- 1.8V device(K9F12XXQ0A) : 1.70~1.95V
- 3.3V device(K9F12XXU0A) : 2.7 ~ 3.6 V
· Organization
- Memory Cell Array
- X8 device(K9F1208X0A) : (64M + 2048K)bit x 8 bit
- X16 device(K9F1216X0A) : (32M + 1024K)bit x 16bit
- Data Register
- X8 device(K9F1208X0A) : (512 + 16)bit x 8bit
- X16 device(K9F1216X0A) : (256 + 8)bit x16bit
· Automatic Program and Erase
- Page Program
- X8 device(K9F1208X0A) : (512 + 16)Byte
- X16 device(K9F1216X0A) : (256 + 8)Word
- Block Erase :
- X8 device(K9F1208X0A) : (16K + 512)Byte
- X16 device(K9F1216X0A) : ( 8K + 256)Word
· Page Read Operation
- Page Size
- X8 device(K9F1208X0A) : (512 + 16)Byte
- X16 device(K9F1216X0A) : (256 + 8)Word
- Random Access : 12ms(Max.)
- Serial Page Access : 50ns(Min.)
· Fast Write Cycle Time
- Program time : 200ms(Typ.)
- Block Erase Time : 2ms(Typ.)
· Command/Address/Data Multiplexed I/O Port
· Hardware Data Protection
- Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
· Command Register Operation
· Intelligent Copy-Back
· Unique ID for Copyright Protection
· Package
- K9F12XXU0A-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F12XXX0A-DCB0/DIB0
63- Ball TBGA
- K9F1208U0A-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F12XXU0A-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F12XXX0A-HCB0/HIB0
63- Ball TBGA - Pb-free Package
- K9F1208U0A-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1208U0A-V,F(WSOPI ) is the same device as K9F1208U0A-Y,P(TSOP1) except package type.
K9F1208B0B
PDF/DataSheet Download
- Datasheet: K9F1208B0B
- File Size: 1054247 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
- ·K9F1208D0A
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
- 766143 KB
- ·K9F1208D0A-P
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
- 766143 KB
- ·K9F1208D0A-Y
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
- 766143 KB
- ·K9F1208D0B
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit NAND Flash Memory
- 785423 KB
- ·K9F1208D0B-D
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit NAND Flash Memory
- 785423 KB
- ·K9F1208D0B-Y
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit NAND Flash Memory
- 785423 KB
- ·K9F1208Q0A
- SAMSUNG [Samsung semiconductor]
- 512Mb/256Mb 1.8V NAND Flash Errata
- 671684 KB
- ·K9F1208Q0A-XXB0
- SAMSUNG [Samsung semiconductor]
- 512Mb/256Mb 1.8V NAND Flash Errata
- 826652 KB
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