K9F1208Q0B

NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns. Maximum DC voltage on input/output pins is V_CC,+0.3V which, during transitions, may overshoot to V_CC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Offered in 64Mx8bit the K9F1208Q0B is 512M bit with spare 16M bit capacity. The K9F1208Q0B is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell K9F1208Q0B provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page  can be read out at 50ns  cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1208Q0B extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208Q0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.