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K9F3208W0A-TCB0, K9F3208W0A-TCBO, K9F3208WOA-FCBO

Table of contents:
Info of K9F3208W0A-TCB0
Info of K9F3208W0A-TCBO
Info of K9F3208WOA-FCBO

K9F3208W0A-TCB0, K9F3208W0A-TCBO, K9F3208WOA-FCBO Selling Leads, Datasheet

MFG:300 Package Cooled:TSOP D/C:NA

K9F3208W0A-TCB0, K9F3208W0A-TCBO, K9F3208WOA-FCBO Picture

K9F3208W0A-TCB0, K9F3208W0A-TCBO, K9F3208WOA-FCBO Datasheet download

Five Points

Part Number: K9F3208W0A-TCB0

MFG: 300

Package Cooled: TSOP

D/C: NA

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K9F3208W0A-TCB0 General Description

The K9F3208W0A is a 4M(4,194,304)x8bit NAND Flash Mem-ory with a spare 128K(131,072)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typical 250s and an erase operation can be performed in typi-cal 2ms on an 8K-byte block.

Data in the page can be read out at 50ns cycle time per byte.The I/O pins serve as the ports for address and data input/out-put as well as command inputs. The on-chip write controller automates all program and erase system functions, including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F3208W0A extended reliability of 1,000,000 program/erase cycles by providing ECC(Error Cor-rection Code) with real time mapping-out algorithm. The K9F3208W0A is an optimum solution for large nonvolatile stor-age application such as solid state storage, digital voice recorder, digital still camera and other portable applications requiring nonvolatility.

K9F3208W0A-TCB0 Maximum Ratings

Parameter		Symbol	Rating	Unit
Voltage on any pin relative to V_SS		V_IN	-0.6 to +7.0	V
Temperature Under Bias	K9F3208W0A-TCB0	T_BIAS	-10 to +125
	K9F3208W0A-TIB0		-40 to +125
Storage Temperature		T_STG	-65 to +150

K9F3208W0A-TCB0 Features

Voltage Supply : 2.7V ~ 5.5V
Organization
- Memory Cell Array : (4M + 128K)bit x 8bit
- Data Register         : (512 + 16)bit x8bit
Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase    : (8K + 256)Byte
- Status Register
528-Byte Page Read Operation
- Random Access      : 10s(Max.)
- Serial Page Access : 50ns(Min.)
Fast Write Cycle Time
- Program Time       : 250s(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
-Endurance : 1Million Program/Erase Cycles
- Data Retention : 10 years
Command Register Operation
44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)
- Forward Type

K9F3208W0A-TCB0 Connection Diagram

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