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K9F5608U0B-YIB0, K9F5608U0C-DCB0, K9F5608U0CD-PCB0

Table of contents:
Info of K9F5608U0B-YIB0
Info of K9F5608U0C-DCB0
Info of K9F5608U0CD-PCB0

K9F5608U0B-YIB0, K9F5608U0C-DCB0, K9F5608U0CD-PCB0 Selling Leads, Datasheet

MFG:AMD Package Cooled:TSOP D/C:09+

K9F5608U0B-YIB0, K9F5608U0C-DCB0, K9F5608U0CD-PCB0 Picture

K9F5608U0B-YIB0, K9F5608U0C-DCB0, K9F5608U0CD-PCB0 Datasheet download

Five Points

Part Number: K9F5608U0B-YIB0

MFG: AMD

Package Cooled: TSOP

D/C: 09+

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K9F5608U0B-YIB0 General Description

Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0B is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in ypical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F56XXX0Bs extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.

The K9F56XXX0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

K9F5608U0B-YIB0 Maximum Ratings

Parameter		Symbol	Rating		Unit
			K9F56XXQ0B(1.8V)	K9F56XXU0B(3.3V)
Voltage on any pin relative to V_SS		V_IN/OUT	-0.6 to + 2.45	-0.6 to + 4.6	V
		V_CC	-0.2 to + 2.45	-0.6 to + 4.6
		V_CCQ	-0.2 to + 2.45	-0.6 to + 4.6
Temperature Under Bias	K9F56XXX0B-XCB0	T_BIAS	-10 to + 125
	K9F56XXX0B-XIB0		-40 to +125
Storage Temperature	K9F56XXX0B-XCB0	T_STG	-65 to +150
	K9F56XXX0B-XIB0
Short Circuit Current		I_os	5

K9F5608U0B-YIB0 Features

*Voltage Supply
    - 1.8V device(K9F56XXQ0B) : 1.70~1.95V
    - 3.3V device(K9F56XXU0B) : 2.7 ~ 3.6 V
*Organization
- Memory Cell Array
    - X8   device(K9F5608X0B) : (32M + 1024K)bit x 8 bit
    - X16 device(K9F5616X0B) : (16M +   512K)bit x 16bit
- Data Register
    - X8   device(K9F5608X0B) : (512 + 16)bit x 8bit
    - X16 device(K9F5616X0B) : (256 +   8)bit x16bit
*Automatic Program and Erase
- Page Program
    - X8   device(K9F5608X0B) : (512 + 16)Byte
    - X16 device(K9F5616X0B) : (256 +   8)Word
- Block Erase :
    - X8   device(K9F5608X0B) : (16K + 512)Byte
    - X16 device(K9F5616X0B) : ( 8K + 256)Word
*Page Read Operation
- Page Size
    - X8   device(K9F5608X0B) : (512 + 16)Byte
    - X16 device(K9F5616X0B) : (256 +   8)Word
- Random Access      : 10ms(Max.)
- Serial Page Access : 50ns(Min.)
*Fast Write Cycle Time
- Program time : 200ms(Typ.)
- Block Erase Time : 2ms(Typ.)
*Command/Address/Data Multiplexed I/O Port
*Hardware Data Protection
- Program/Erase Lockout During Power Transitions
*Reliable CMOS Floating-Gate Technology
- Endurance        : 100K Program/Erase Cycles
- Data Retention : 10 Years
*Command Register Operation
*Intelligent Copy-Back
*Unique ID for Copyright Protection
*Package
- K9F56XXU0B-YCB0/YIB0
    48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F56XXX0B-DCB0/DIB0
    63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- K9F5608U0B-VCB0/VIB0
    48 - Pin WSOP I (12X17X0.7mm)
- K9F56XXU0B-PCB0/PIB0
    48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - Pb-free Package
- K9F56XXX0B-HCB0/HIB0
    63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
      - Pb-free Package
- K9F5608U0B-FCB0/FIB0
    48 - Pin WSOP I (12X17X0.7mm) - Pb-free Package
      * K9F5608U0B-V,F(WSOPI ) is the same device as
         K9F5608U0B-Y,P(TSOP1) except package type.

K9F5608U0B-YIB0 Connection Diagram

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