L8113 T/R, L8115, L8115 T/R Selling Leads, Datasheet
MFG:UTC Package Cooled:SSOP20 D/C:08.09+
L8113 T/R, L8115, L8115 T/R Datasheet download
Part Number: L8113 T/R
MFG: UTC
Package Cooled: SSOP20
D/C: 08.09+
L8113 T/R, L8115, L8115 T/R
- Table of contents:
Info of L8113 T/R
Info of L8115
Info of L8115 T/R
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About L8115
PDF/DataSheet Download
Datasheet: L8115
File Size: 179100 KB
Manufacturer: UTC [Unisonic Technologies]
Download : Click here to Download
About L8115
PDF/DataSheet Download
Datasheet: L8115
File Size: 179100 KB
Manufacturer: UTC [Unisonic Technologies]
Download : Click here to Download
About L8115
PDF/DataSheet Download
Datasheet: L8115
File Size: 179100 KB
Manufacturer: UTC [Unisonic Technologies]
Download : Click here to Download
L8115 General Description
The UTC L8115 is designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR, cellular telephones etc. with a minimum of external components.
With the addition of two capacitors and a resistor the devices provide drain voltage and current control for three external grounded source FETs, generating the regulated negative rail required for FET gate biasing whilst operating from a single supply. This negative bias, at -2.8 volts, can also be used to supply other external circuits.
The UTC L8115 includes bias circuits to drive up to three external FETs. A control input to the device selects either one of two FETs as operational, the third FET is permanently active. This feature is normally used as an LNB polarization switch. Also specific to Universal LNB applications is the 22kHz tone detection and logic output feature which is used to enable high and low band frequency switching.
Drain current setting of the UTC L8115 is user selectable over the range 0 to 15mA, this is achieved with addition of a single resistor. The UTC L8115 gives 2.2 volts drain whilst.
L8115 Maximum Ratings
| PARAMETER | SYMBOL | RATINGS | UNIT |
| Supply Voltage | Vcc | -0.6 ~ 12 | V |
| Supply Current | Icc | 100 | mA |
| Input Voltage | VIN | 25 Continuous | V |
| Drain Current (per FET)(set by RCAL) | ID | 0 ~ 15 | mA |
| Power Dissipation(Ta=25) SSOP-16(150mil) SSOP-20(150mil) |
PD | 500 | mW |
| 500 | mW | ||
| Operating Temperature | Topr | -40 ~ 80 | |
| Storage Temperature | Tstg | -50 ~ 85 |
L8115 Features
·Provides bias for GaAs and HEMT FETs.
·Drives up to three FETs.
·Dynamic FET protection.
·Drain current set by external resistor.
·Regulated negative rail generator requires only 2 external capacitors.
·Choice in drain voltage
·Wide supply voltage range
·Polarisation switch for LNBs
·22KHz tone detection for band switching.
·Tone detector ignores unwanted signals
·Support fr MIMIC, FET and Bipolar local oscillator devices
·Drives up to three FETs.
·Dynamic FET protection.
·Drain current set by external resistor.
·Regulated negative rail generator requires only 2 external capacitors.
·Choice in drain voltage
·Wide supply voltage range
·Polarisation switch for LNBs
·22KHz tone detection for band switching.
·Tone detector ignores unwanted signals
·Support fr MIMIC, FET and Bipolar local oscillator devices
L8115 Typical Application
·Satellite receiver LNBs
·Private mobile radio(PMR)
·Cellular telephones
·Private mobile radio(PMR)
·Cellular telephones
L8115 Connection Diagram
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