LV200-AW/2/3200, LV200-AW/2/SP1, LV2024E45R Selling Leads, Datasheet
MFG:LEM Package Cooled:sensor D/C:09+
LV200-AW/2/3200, LV200-AW/2/SP1, LV2024E45R Datasheet download
Part Number: LV200-AW/2/3200
MFG: LEM
Package Cooled: sensor
D/C: 09+
LV200-AW/2/3200, LV200-AW/2/SP1, LV2024E45R
- Table of contents:
Info of LV200-AW/2/3200
Info of LV200-AW/2/SP1
Info of LV2024E45R
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About LV2001
PDF/DataSheet Download
Datasheet: LV2001
File Size: 40547 KB
Manufacturer: KNOX [Knox Semiconductor, Inc]
Download : Click here to Download
About LV2001
PDF/DataSheet Download
Datasheet: LV2001
File Size: 40547 KB
Manufacturer: KNOX [Knox Semiconductor, Inc]
Download : Click here to Download
About LV2024E45R
PDF/DataSheet Download
Datasheet: LV2024E45R
File Size: 63584 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
LV2024E45R General Description
NPN silicon planar epitaxial microwave power transistor in a SOT445A metal ceramic flange package with the emitter connected to the flange.
LV2024E45R Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. |
UNIT |
| VCBO | collector-base voltage | open emitter | - | 40 | V |
| VCER | collector-emitter voltage | RBE = 47W | - | 20 | V |
| VCBO | collector-emitter voltage | open base | - | 15 | V |
| VEBO | emitter-base voltage | open collector | - | 3 | V |
| IC | collector current (DC) | - | 2 | A | |
| Ptot | total power dissipation | Tmb £ 75 °C | - | 18 | W |
| Tstg | storage temperature | -65 | +200 | °C | |
| Tj | operating junction temperature | - | 200 | °C | |
| Tsld | soldering temperature | at 0.1 mm from case; t £ 10 s | - | 250 | °C |
LV2024E45R Features
· Interdigitated structure provides high emitter efficiency
· Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.
· Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.
LV2024E45R Typical Application
· Common emitter class-A amplifiers in CW conditions for military and professional applications in the 2 to 2.4 GHz band.
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