M54587, M54587FP, M54587P Selling Leads, Datasheet
MFG:MITSUBIS Package Cooled:SOP D/C:06+
M54587, M54587FP, M54587P Datasheet download
Part Number: M54587
MFG: MITSUBIS
Package Cooled: SOP
D/C: 06+
M54587, M54587FP, M54587P
- Table of contents:
Info of M54587
Info of M54587FP
Info of M54587P
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About M54587
PDF/DataSheet Download
Datasheet: M54587
File Size: 45069 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
About M54587FP
PDF/DataSheet Download
Datasheet: M54587FP
File Size: 45069 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
About M54587P
PDF/DataSheet Download
Datasheet: M54587P
File Size: 45069 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
M54587FP General Description
M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
M54587FP Maximum Ratings
|
Symbol |
Parameter |
Conditions |
Ratings |
Unit | |
|
VCC |
Supply voltage |
10 |
V | ||
|
VCEO |
Collector-emitter voltage | Output, H |
0.5 ~ +50 |
V | |
|
VI |
Input voltage |
0.5 ~ VCC |
V | ||
|
IC |
Collector current | Current per circuit output, L |
500 |
mA | |
|
IF |
Clamping diode forward current |
500 |
mA | ||
|
VR |
Clamping diode reverse voltage |
50 |
V | ||
|
Pd |
Power dissipation | Ta = 25°C, when mounted on board |
1.79/1.1 |
W | |
|
Topr |
Operating temperature |
20 ~ +75 |
°C | ||
|
Tstg |
Storage temperature |
55 ~ +125 |
°C | ||
M54587FP Features
` High breakdown voltage (BVCEO 50V)
` High-current driving (IC(max) = 500mA)
`"L" active level input
` With input diode
` With clamping diodes
` Wide operating temperature range (Ta = 20 to +75°C)
` High-current driving (IC(max) = 500mA)
`"L" active level input
` With input diode
` With clamping diodes
` Wide operating temperature range (Ta = 20 to +75°C)
M54587FP Typical Application
Interfaces between microcomputers and high-voltage, highcurrent drive systems, drives of relays and MOS-bipolar logic IC interfaces
M54587FP Connection Diagram
M54587P General Description
M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
M54587P Maximum Ratings
|
Symbol |
Parameter |
Conditions |
Ratings |
Unit | |
|
VCC |
Supply voltage |
10 |
V | ||
|
VCEO |
Collector-emitter voltage | Output, H |
0.5 ~ +50 |
V | |
|
VI |
Input voltage |
0.5 ~ VCC |
V | ||
|
IC |
Collector current | Current per circuit output, L |
500 |
mA | |
|
IF |
Clamping diode forward current |
500 |
mA | ||
|
VR |
Clamping diode reverse voltage |
50 |
V | ||
|
Pd |
Power dissipation | Ta = 25°C, when mounted on board |
1.79/1.1 |
W | |
|
Topr |
Operating temperature |
20 ~ +75 |
°C | ||
|
Tstg |
Storage temperature |
55 ~ +125 |
°C | ||
M54587P Features
` High breakdown voltage (BVCEO 50V)
` High-current driving (IC(max) = 500mA)
`"L" active level input
` With input diode
` With clamping diodes
` Wide operating temperature range (Ta = 20 to +75°C)
` High-current driving (IC(max) = 500mA)
`"L" active level input
` With input diode
` With clamping diodes
` Wide operating temperature range (Ta = 20 to +75°C)
M54587P Typical Application
Interfaces between microcomputers and high-voltage, highcurrent drive systems, drives of relays and MOS-bipolar logic IC interfaces
M54587P Connection Diagram
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