M66516FP, M66517-058, M66517-074 Selling Leads, Datasheet
MFG:MITSUBSHI Package Cooled:SOP24 D/C:2007+
M66516FP, M66517-058, M66517-074 Datasheet download
Part Number: M66516FP
MFG: MITSUBSHI
Package Cooled: SOP24
D/C: 2007+
MFG:MITSUBSHI Package Cooled:SOP24 D/C:2007+
M66516FP, M66517-058, M66517-074 Datasheet download
MFG: MITSUBSHI
Package Cooled: SOP24
D/C: 2007+
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PDF/DataSheet Download
Datasheet: M66516FP
File Size: 234145 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: M660
File Size: 60756 KB
Manufacturer: ICST [Integrated Circuit Systems]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: M660
File Size: 60756 KB
Manufacturer: ICST [Integrated Circuit Systems]
Download : Click here to Download
The M66516 is a semiconductor laser-diode driver/controller.Its functions are the driving and laser power control of a specific type (Mitsubishi's R type laser) of semiconductor laser diode, in which the cathode of a semiconductor laser diode is connected in stem structure to the anode of a monitoring photodiode.
The IC has a laser drive current output pin of source type and is capable of driving a laser diode on a maximum bias current of 30mA and a maximum switching current of 120 mA, which is switched at a rate of 20Mbits/sec.
Since the M66516 has a built in sample-hold circuit, it is possible to realize an internal APC* system that requires no external device for laser power control.
*: Automatic Power Control
Symbol |
Parameter |
Condition |
Ratings |
Unit | |
Vcc | Supply voltage |
- |
0.5 to +7.0 |
V | |
VI | Input voltage | VL1, VL2, Vr |
- |
-0.3toVcc |
V |
DATE, ENB, S/H |
- |
-0.3 to+0.7 | |||
Vo | Output voltage | CO |
"H" Output |
-0.3to+5.5 |
V |
RO |
"H" Output |
-0.3 to 7.0 | |||
IL1 | Output current1 |
- |
-90 |
mA | |
IL2 | Output current 2 |
- |
-90 |
mA | |
Pd | Power dissipation |
- |
890 |
mA | |
IB | Bias current |
Measured being mounted Ta = 25°C (Note 1) |
-45 |
mW | |
Tstg | Storage temperature |
- |
-60 to +150 |
|
Semiconductor laser-diode applied equipment