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MIE-334A4, MIE-334H4, MIE-334L3

MIE-334A4, MIE-334H4, MIE-334L3 Selling Leads, Datasheet

D/C:07+

MIE-334A4, MIE-334H4, MIE-334L3 Picture

MIE-334A4, MIE-334H4, MIE-334L3 Datasheet download

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Part Number: MIE-334A4

 

MFG: --

Package Cooled:

D/C: 07+

 

 

 
 
 
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About MIE-334A4

PDF/DataSheet Download

Datasheet: MIE-334A4

File Size: 33133 KB

Manufacturer: UOT [Unity Opto Technology]

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About MIE-334H4

PDF/DataSheet Download

Datasheet: MIE-334H4

File Size: 32442 KB

Manufacturer: UOT [Unity Opto Technology]

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About MIE-334L3

PDF/DataSheet Download

Datasheet: MIE-334L3

File Size: 33138 KB

Manufacturer: UOT [Unity Opto Technology]

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MIE-334A4 General Description

The MIE-334A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package.

MIE-334A4 Maximum Ratings

Parameter
Maximum Rating
Unit
Power Dissipation
120
mW
Peak Forward Current(300pps,10ms pulse)
1
A
Continuos Forward Current
100
mA
Reverse Voltage
5
V
Operating Temperature Range
-55oC to +100oC
Storage Temperature Range
-55oC to +100oC
Lead Soldering Temperature
260oC for 5 seconds

MIE-334A4 Features

` High radiant power and high radiant intensity
` Suitable for DC and high pulse current operation
` Standard T-1 ( 3mm ) package
` Peak wavelength p = 940 nm
` Good spectral matching to si-photodetector
` Radiant angle : ±15°

MIE-334H4 General Description

The MIE-334H4 is a GaAlAs infrared LED having a peak wavelength at 850nm. It features ultra-high power, high response speed and molded package with higher radiant intensity. In addition to improving the S/N ratio in applied optical systems, the MIE-334H4 has greatly improved long-distance characteristics as well as significantly increased its range of applicability .

MIE-334H4 Maximum Ratings

Parameter
Maximum Rating
Unit
Power Dissipation
120
mW
Peak Forward Current(300pps,10ms pulse)
1
A
Continuos Forward Current
100
mA
Reverse Voltage
5
V
Operating Temperature Range
-55oC to +100oC
Storage Temperature Range
-55oC to +100oC
Lead Soldering Temperature
260oC for 5 seconds

MIE-334H4 Features

` Ultra-High radiant intensity
` High response speed
` Standard T-1 ( 3mm) package, radiant angle : 30°
` Peak wavelength  P =850 nm
` Good spectral matching to si-photodetector

MIE-334H4 Typical Application

· Data communication
· SIR

MIE-334L3 General Description

The MIE-334L3 is an infrared emitting diode in GaAlAs on GaAlAs technology molded in water clear plastic package.

MIE-334L3 Maximum Ratings

Parameter
Maximum Rating
Unit
Power Dissipation
120
mW
Peak Forward Current(300pps,10ms pulse)
1
A
Continuos Forward Current
100
mA
Reverse Voltage
5
V
Operating Temperature Range
-55oC to +100oC
Storage Temperature Range
-55oC to +100oC
Lead Soldering Temperature
260oC for 5 seconds

MIE-334L3 Features

` High power and high radiant intensity
` Suitable for DC and high pulse current operation
` Standard T-1 (  3mm ) package
` Peak wavelength p = 880 nm
` Good spectral matching to si-photodetector

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