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MIE-114A2

Features: · Selected to specific on-line intensity and radiant intensity ranges· Low cost , plastic side looking package· Mechanically and spectrally matched toThe MID-11422 of phototransistor .Specifications Parameter Maximum Rating Unit Power Dissipation 75 mW Peak Forwa...

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SeekIC No. : 004421216 Detail

MIE-114A2: Features: · Selected to specific on-line intensity and radiant intensity ranges· Low cost , plastic side looking package· Mechanically and spectrally matched toThe MID-11422 of phototransistor .Spec...

MIE-114A2 Data Sheet

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Part Number:
MIE-114A2
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

· Selected to specific on-line intensity and radiant intensity ranges
· Low cost , plastic side looking package
· Mechanically and spectrally matched toThe MID-11422 of phototransistor .


Specifications

Parameter
Maximum Rating
Unit
Power Dissipation
75
mW
Peak Forward Current(300pps,10ms pulse)
1
A
Continuos Forward Current
50
mA
Reverse Voltage
5
V
Operating Temperature Range
-55oC to +100oC
Storage Temperature Range
-55oC to +100oC
Lead Soldering Temperature
260oC for 5 seconds



Description

The MIE-114A2 is a GaAs infrared emitting diode molded in clear, lensed side looking package .

The MIE-114A2 provides a broad range ofintensity selection .


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