MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOP8 D/C:0
MMDF2P03HDR2, MMDF3N02HD, MMDF3N02HDR2 Datasheet download
Category: Discrete Semiconductor Products
MFG: ON Semiconductor
Package Cooled: SOP8
D/C: 0
Description: MOSFET P-CH 20V 3.8A 8-SOIC
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Datasheet: MMDD110T1
File Size: 157687 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: MMDF3N02HD
File Size: 305136 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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PDF/DataSheet Download
Datasheet: MMDD110T1
File Size: 157687 KB
Manufacturer:
Download : Click here to Download
MiniMOSE devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process.These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical appli cations are dcdc converters, and power management in portable and battery powered products such as computers,printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Miniature SO8 Surface Mount Package - Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for SO8 Package Provided
|
Rating |
Symbol |
Value |
Units |
| DraintoSource Voltage |
VDSS |
20 |
V |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
20 |
V |
| GatetoSource Voltage - Continuous |
VGS |
±20 |
V |
| Drain Current - Continuous @ TA = 25°C Drain Current - Continuous @ TA = 100°C Drain Current - Single Pulse (tp 10s) |
ID ID IDM |
3.8 2.6 19 |
Adc Apk |
| Operating and Storage Temperature Range |
TJ,Tstg |
55 to 150 |
°C |
| Total Power Dissipation @ TA = 25°C(1) |
PD |
2.0 |
W |
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 20 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 ) |
EAS |
405 |
mJ |
| Thermal Resistance Junction to Ambient (1) |
RJA |
62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds |
TL |
260 |
°C |
| Technical/Catalog Information | MMDF3N02HDR2 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 3.8A |
| Rds On (Max) @ Id, Vgs | 90 mOhm @ 3A, 10V |
| Input Capacitance (Ciss) @ Vds | 630pF @ 16V |
| Power - Max | 2W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 18nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MMDF3N02HDR2 MMDF3N02HDR2 |
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