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MFG:ON  Package Cooled:SOP8  D/C:SOP

MMDF3N04HD, MMDF3N04HDR2, MMDF3N04HDR2G Picture

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Five Points

Part Number: MMDF3N04HD

 

MFG: ON

Package Cooled: SOP8

D/C: SOP

 

 

 
 
 
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  • MMDF3N04HD

  • Vendor: ON Pack: SO Qty: 1201 Note: stock on hand  Adddate: 2026-04-17
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  • TCW(HK) electronic limited   China
    Contact: Mr.David   MSN:hongjijia@hotmail.com
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    Fax: 86-0755-83012739
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  • MMDF3N04HDR2

  • Vendor: ON Pack: SOIC D/C: 08+& Qty: 30000 Note: N Channel  Adddate: 2026-04-17
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  • Umos Electronic(HK) CO.,LTD.   China
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  • MMD-10DZ-1R5M-X3

  • Vendor: MAG LAYERS D/C: 0805& Qty: 300 Note: New, Same-Day Ship, Reel(300)  Adddate: 2026-04-17
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  • TechNut Electronics   United
    Contact: Mr.Josh  
    Tel: 0-801-529-8126
    Fax: 0-801-649-2705
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About MMDF3N04HD

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Datasheet: MMDF3N04HD

File Size: 298133 KB

Manufacturer: ONSEMI [ON Semiconductor]

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  • MMDF3N04HDR2

  • Vendor: ON Pack: SOIC D/C: 08+& Qty: 30000 Note: N Channel  Adddate: 2026-04-17
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  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
    Tel: 0086-755-61282699
    Fax: 0086-755-61174144
    (11)

  • MMD-10DZ-1R5M-X3

  • Vendor: MAG LAYERS D/C: 0805& Qty: 300 Note: New, Same-Day Ship, Reel(300)  Adddate: 2026-04-17
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  • TechNut Electronics   United
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  • MMDF1N05ER2

  • Vendor: ON Pack: SOIC D/C: 08+& Qty: 30000 Note: N Channel  Adddate: 2026-04-17
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    Fax: 0086-755-61174144
    (11)

  • MMDF1N05ER2G

  • Vendor: ON Pack: SOIC D/C: 08+& Qty: 30000 Note: N Channel  Adddate: 2026-04-17
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  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
    Tel: 0086-755-61282699
    Fax: 0086-755-61174144
    (11)

About MMDD110T1

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Datasheet: MMDD110T1

File Size: 157687 KB

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  • MMD-10DZ-1R5M-X3

  • Vendor: MAG LAYERS D/C: 0805& Qty: 300 Note: New, Same-Day Ship, Reel(300)  Adddate: 2026-04-17
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  • TechNut Electronics   United
    Contact: Mr.Josh  
    Tel: 0-801-529-8126
    Fax: 0-801-649-2705
    (14)

  • MMDF1N05ER2

  • Vendor: ON Pack: SOIC D/C: 08+& Qty: 30000 Note: N Channel  Adddate: 2026-04-17
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  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
    Tel: 0086-755-61282699
    Fax: 0086-755-61174144
    (11)

  • MMDF1N05ER2G

  • Vendor: ON Pack: SOIC D/C: 08+& Qty: 30000 Note: N Channel  Adddate: 2026-04-17
  • Inquire Now
  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
    Tel: 0086-755-61282699
    Fax: 0086-755-61174144
    (11)

About MMDD110T1

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Datasheet: MMDD110T1

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MMDF3N04HD General Description

MiniMOSE devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones.

They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

 

MMDF3N04HD Maximum Ratings

Rating

Symbol

Value

Unit

DraintoSource Voltage

VDSS

40

Vdc

DraintoGate Voltage (RGS = 1.0 MW)

VDGR

40

Vdc

GatetoSource Voltage - Continuous

VGS

± 20

Vdc

Drain Current - Continuous @ TA = 25 (1)
- Continuous @ TA = 70°C (1)
- Pulsed Drain Current (4)

ID
ID
IDM

3.4
3.0
40

Adc

Apk

Total Power Dissipation @ TA = 25 (1)
Linear Derating Factor (1)

PD

2.0
16

Watts
mW/

Total Power Dissipation @ TA = 25 (2)
Linear Derating Factor (2)

PD

1.39
11.11

Watts
mW/

Operating and Storage Temperature Range

TJ, Tstg

55 to 150

Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 4.0 mH, VDS = 40 Vdc)

EAS

162

mJ

MMDF3N04HD Features

` Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
` Logic Level Gate Drive - Can Be Driven by Logic ICs
` Miniature SO8 Surface Mount Package - Saves Board Space
` Diode Is Characterized for Use In Bridge Circuits
` Diode Exhibits High Speed, With Soft Recovery
` IDSS Specified at Elevated Temperature
` Mounting Information for SO8 Package Provided
` Avalanche Energy Specified

MMDF3N04HD Connection Diagram

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