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Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola!fls High Cell Density TMO process. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. Dual HDTMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applica- tions are dc¤Cdc converters, and power management in portabl and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.
MMDF6N03HD Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Cto - CSource Volta
VDSS
30
Vdc
Gate - Cto - CSource Voltage - Continu
VGS
±20
Vdc
Drain Current - Continuous @TA = 25 Drain Current - Single Pulse (Tp 10 s)
ID IDM
6.0 30
Adc Apk
Source Current - Continuous @TA = 25
IS
1.7
Adc
Total Power Dissipation @ TA = 25 (1)
PD
2.0
Watts
Operating and Storage Temperature Range
TJ ,Tstg
-55 to 150
Single Pulse Drain - Cto - CSource Avalanche Energy - Startin TJ= 25 (VDD = 30 Vdc, VDS = 5.0 Vdc, VL = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 )
EAS
325
mJ
Thermal Resistance - Junction - Cto - CAmbi
RJA
62.5
/W
Maximum Lead Temperature for Soldering Purposes, 1/8 from Case for 10 sec.
TL
260
MMDF6N03HD Features
` Low RDS(on) Provides Higher Efficiency and Extends Battery Life ` Logic Level Gate Drive !" Can Be Driven by Logic IC ` Miniature SO¤C8 Surface Mount Package !" Saves Board Spa ` Diode Is Characterized for Use In Bridge Circuits ` Diode Exhibits High Speed, With Soft Recovery ` I Specified at Elevated Temperature DSS ` Mounting Information for SO¤C8 Package Provide