MP4411, MP4501, MP4502 Selling Leads, Datasheet
MFG:TOSHIBA Package Cooled:ZIP D/C:06+
MP4411, MP4501, MP4502 Datasheet download
Part Number: MP4411
MFG: TOSHIBA
Package Cooled: ZIP
D/C: 06+
MP4411, MP4501, MP4502
- Table of contents:
Info of MP4411
Info of MP4501
Info of MP4502
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About MP4411
PDF/DataSheet Download
Datasheet: MP4411
File Size: 199528 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About MP4501
PDF/DataSheet Download
Datasheet: MP4501
File Size: 282159 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About MP4502
PDF/DataSheet Download
Datasheet: MP4502
File Size: 270205 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
MP4411 Maximum Ratings
| Characteristics | Symbol | Rating | Unit | |
| Collector-emitter voltage | VCEB | 50 | V | |
| Collector-emitter voltage | VCEO | 60 ± 10 | V | |
| Collector-emitter voltage | VEBO | 8 | V | |
| Collector current | DC | IC | 2 | A |
| Pulse | ICP | 3 | ||
| Collector power dissipation (1 device operation) |
PC | 2.0 | W | |
| Collector power dissipation (4 devices operation) |
PT | 4.0 | W | |
| Junction temperature | Tj | 150 | °C | |
| Storage temperature range | Tstg | −55 to 150 | °C | |
MP4411 Typical Application
• 4-V gate drivability
• Small package by full molding (SIP 12 pin)
• High drain power dissipation (4-device operation) : PT = 28 W (Tc = 25°C)
• Low drain-source ON resistance: RDS (ON) = 0.28 (typ.)
• High forward transfer admittance: |Yfs| = 3.5 S (typ.)
• Low leakage current: IGSS = ±10 A (max) (VGS = ±16 V) IDSS = 100 A (max) (VDS = 100 V)
• Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
• Small package by full molding (SIP 12 pin)
• High drain power dissipation (4-device operation) : PT = 28 W (Tc = 25°C)
• Low drain-source ON resistance: RDS (ON) = 0.28 (typ.)
• High forward transfer admittance: |Yfs| = 3.5 S (typ.)
• Low leakage current: IGSS = ±10 A (max) (VGS = ±16 V) IDSS = 100 A (max) (VDS = 100 V)
• Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
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