MP7652, MP7652AS, MP7660AS Selling Leads, Datasheet
MFG:MP Package Cooled:SMD D/C:07/08+
MP7652, MP7652AS, MP7660AS Datasheet download

Part Number: MP7652
MFG: MP
Package Cooled: SMD
D/C: 07/08+
MFG:MP Package Cooled:SMD D/C:07/08+
MP7652, MP7652AS, MP7660AS Datasheet download

MFG: MP
Package Cooled: SMD
D/C: 07/08+
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PDF/DataSheet Download
Datasheet: MP7652
File Size: 183360 KB
Manufacturer: EXAR [Exar Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MP7652AS
File Size: 183360 KB
Manufacturer: EXAR [Exar Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MP7001
File Size: 155175 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
The MP7652 is ideal for digital gain control of high frequency analog signals such as video, composite video, CCD and others. The device includes 4-channels of high speed, wide bandwidth, two quadrant multiplying, 8-bit accurate digital-toanalog converter. It includes an output drive buffer per channel capable of driving a +1mA (typ) load. DNL of better than +0.5 LSB is achieved with a channel-to-channel matching of typically 0.5%. Stability, matching, and precision of the DACs are achieved by using MPS' thin film technology. Also, excellent channel-to-channel isolation is achieved with EXAR's BiCMOS process which cannot be achieved using a typical CMOS technology.
An open loop architecture (patent pending) provides wide small signal bandwidth from VREF to output up to 15 MHz (typ), fast output settling time of 150 ns, and excellent VREF feedthrough isolation. The bottom of each DAC reference string is brought out separately for totally isolated operation. In addition, low distortion in the order of 0.25% with a 1 V p-p, 1 MHz signal is achieved.
The combination of a constant input Z and the ability to vary VREFN within VCC 1.8 and VEE +1.5 V allows flexibility for optimum system design.
The MP7652 is fabricated on a junction isolated, high speed BiCMOS (BiCMOS IVTM) process with thin film resistors. This process enables precision high speed analog/digital (mixedmode) circuits to be fabricated on the same chip.
VCC to VREFN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+6.5 V
VEE to VREFN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6.5 V
VCC to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+13.0 V
VEE to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6.5 V
VREFP 1-4 to DGND, VREFN . . . . . . . . . . . . . . . . . VCC to VEE
Digital Input & Output Voltage to DGND 0.5 to VDD +0.5 V
Operating Temperature Range
Extended Industrial . . . . . . . . . . . . . . . .40°C to +85°C
Maximum Junction Temperature . . . . . . 65°C to 150°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . 150°C
Lead Temperature (Soldering, 10 sec) . . . . . . . . +300°C
Package Power Dissipation Rating @ 75°C
PDIP, SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000mW
Derates above 75°C . . . . . . . . . . . . . . . . . . . . .6mW/°C
NOTES:
1 Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation at or above this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
2 Any input pin which can see a value outside the absolute maximum ratings should be protected by Schottky diode clamps (HP5082-2835) from input pin to the supplies. All inputs have protection diodes which will protect the device from short transients outside the supplies of less than 100mA for less than 100ms.

