MSC81020, MSC8102M440Q, MSC81035MP Selling Leads, Datasheet
MFG:ASI Package Cooled:BGA D/C:06+
MSC81020, MSC8102M440Q, MSC81035MP Datasheet download

Part Number: MSC81020
MFG: ASI
Package Cooled: BGA
D/C: 06+
MFG:ASI Package Cooled:BGA D/C:06+
MSC81020, MSC8102M440Q, MSC81035MP Datasheet download

MFG: ASI
Package Cooled: BGA
D/C: 06+
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PDF/DataSheet Download
Datasheet: MSC81020
File Size: 91806 KB
Manufacturer: STMicro
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MSC1000-029
File Size: 198202 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MSC81035MP
File Size: 58857 KB
Manufacturer: STMicro
Download : Click here to Download
The MSC81020 is a common base hermetically sealed silicon NPN microwave tranisitor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range.
| Symbol | Parameter |
Value |
Unit |
| PDISS | Power Dissipation* |
35 |
W |
| IC | Device Current* |
1.50 |
A |
| VCC | Collector-Supply Voltage* |
35 |
V |
| TJ | Junction Temperature |
200 |
|
| TSTG | Storage Temperature |
65 to 200 |
The MSC81035MP is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. This device is a direct replacement for the MSC1035MP. MSC81035MP offers improved saturated ouput power and collector efficiency based on the test circuit described herein.
Low RFthermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The MSC81035MP is housed in the IMPAC™ package with internal input matching.
| Symbol | Parameter |
Value |
Unit |
| PDISS | Power Dissipation* (TC 100°C) |
150 |
W |
| IC | Device Current* |
3.0 |
A |
| VCC | Collector-Supply Voltage (Pulsed RF Operation) |
55 |
V |
| TJ | Junction Temperature |
250 |
|
| TSTG | Storage Temperature |
65 to 150 |
