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Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 18 W IC Device Current* 650 mA VCC Collector-Supply Voltage* 32 V TJ Junction Temperature 200 °C TSTG Storage Temperature -65 to +150 °CDescript...

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SeekIC No. : 004427807 Detail

MSC1004M: Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 18 W IC Device Current* 650 mA VCC Collector-Supply Voltage* 32 V ...

MSC1004M Data Sheet

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Part Number:: MSC1004M
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/4/28

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Recent History
What is this?

MSC1000-029 evaluate
Features: ·Each channel is independently programmable via DASM software.·Factory set input filters...
MSC1000M evaluate
Features: `RUGGEDIZED VSWR:1 `INPUT MATCHING`LOW THERMAL RESISTANCE `CLASS A OPERATION `POUT = 0.6...
MSC1000MP evaluate
Features: `RUGGEDIZED VSWR :1 `INPUT MATCHING `LOW THERMAL RESISTANCE `CLASS A OPERATION `POUT = ...

Product Details

Description

Specifications

Symbol	Parameter	Value	Unit
P_DISS	Power Dissipation* (TC 100°C)	18	W
I_C	Device Current*	650	mA
V_CC	Collector-Supply Voltage*	32	V
T_J	Junction Temperature	200	°C
T_STG	Storage Temperature	-65 to +150	°C

Description

The MSC1004M is a low-level Class C pulsed transistor specifically designed for DME/IFF driver or output applications.

These devices MSC1004M are capable of withstanding a 8:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and automatic bonding techniques ensure high reliability and product consistency.

The MSC1004M is housed in the IMPAC^TM package with internal input matching.

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MSC1004M

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